Gate-Last Process * XU Gao-Bo(许高博) ** , XU Qiu-Xia(徐秋霞), YIN Hua-Xiang(殷华湘), ZHOU Hua-Jie(周华杰), YANG Tao(杨涛), NIU Jie-Bin(牛洁斌), HE Xiao-Bin(贺晓彬), MENG Ling-Kuan(孟令款), YU Jia-Han(余嘉晗), LI Jun-Feng(李俊峰), YAN Jiang(闫江), ZHAO Chao(赵超)...
22nm Gate Last Process Flow: Fin loop: 主要包括Line pattern, Fin etch, Fin Cut1, Fin Cut2, SDB, Fin CMP. 定义Fin的图形和基本结构。 -1- Wafer-start:采用110 P+衬底硅,阻值大概0.01Ω-cm -2- 外延生长1um厚度的Si。 -3- 清洗wafer: H2SO4, H2O2, water (Piranha solution): to clean or...
The gate stack comprises a box profile in an area between at least two adjacent ones of the plurality of fins.Shogo MochizukiChoongHyun LeeHemanth Jagannathan
[2]集成电路制造工艺与工程应用——温德通--机械工业出版社 (cmpedu.com) [3] Sebaai F , Veloso A , Takahashi H ,et al.Dummy oxide removal in high-k last process integration - how to avoid silicon corrosion issue[C]//International Symposium on Ultra Clean Processing of Semiconductor Surfaces.2...
22nmGateLastFinFETProcessFlow介绍 来源:半导体智造 今天分享网上流传很广的22nm FinFET process flow. 严格来说工艺节点进入20nm以下才会用到FinFET工艺(下期会继续分享22nm Planar process flow),但以I公司为代表的在22nm工艺节点就用到此工艺。像T和S公司都是在16nm/14nm才用到FinFET工艺。
专利名称：Gate-last process for vertical transport field-effect transistor 发明人：Shogo Mochizuki,ChoongHyun Lee,Hemanth Jagannathan 申请号：US16824801 申请日：20200320 公开号：US11145555B2 公开日：20211012 专利内容由知识产权出版社提供 专利附图：摘要：A method of forming a semiconductor structure ...
Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last process Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last...
22nm Gate Last FinFET Process Flow介绍(中) 上篇主要介绍了Fin的形成,接下来继续讲解。 20. NMOS Extension Implant 铺上PR和BARC,然后进行litho和etch,使NMOS区域暴漏出来,再进行砷离子注入,使fin的表面形成一层Extension Implant区域。 21. PMOS Extension Implant...
malexposureofthegatestack.theGFprocesshasbeengradu— allyreplacedby“high-k—first/gate—last’’and“high-k-last/gate— last”structures.Furthermore.forthehigh.k—first/gate—last scheme.itisstilldifficulttofurtherthindowntheEOTto meetthedemandbeyondthe28.nmnodet3,4JRecently ,ahigh ...
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