11-kW, bidirectional, three-phase ANPC based on GaN reference design This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substratedoi:10.1016/j.microrel.2023.115130PBTIVertical GaNTrench MOSFETTunneling modelTrappingWe analyze the threshold voltage stability under positive gate stress in semi-vertical GaN trench MOSFETs with silicon ...
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with both silicon and wide-bandgap power devices like MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs, and GaN HEMTs. Infineon offers excel...
GaN Power ICs PrintExcelCSVCopy Show 100 15102550100All entries Search: Part NumberProduct StatusApplicationFamilyTypeVDS(V)VDS(Dyn)RDS(ON)typ. (mOhms)PackageDatasheet3D ModelSpice ModelCheck Stock NV6427New ReleaseConsumer/IndustrialBi-DirectionalSingle650800100TOLT-16Contact Us...
1 consist of simplified vertical GaN trench MOSFETs (TMOS); the epitaxial structure, grown by metalorganic chemical vapor deposition (MOCVD) on a silicon substrate, include a strain-relief buffer layer, a 1 μm n+-GaN drain layer, 1 μm n−-GaN drift layer, a 500 nm p+-GaN body ...
higher in regions of the HD-GITs where their influence on Vth is stronger (like e.g. in the top AlGaN layer), and that radiation-induced donor-like traps are more abundantly located in regions where their impact on the vertical leakage is higher (like e.g. in the AlN nucleation layer...
Zhu, M., Ma, J., et al.: High-voltage normally-off recessed Tri-gate GaN power MOSFETs with low on-resistance. IEEE Electron Device Lett. 40, 1289–1292 (2019). https://doi.org/10.1109/LED.2019.2922204 Article Google Scholar Guo, Z., et al.: Integrable quasivertical GaN U-shaped...
High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissip
This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress. Keywords: GaN power device; MOSFET; breakdown voltage; specific on-resistance; electric field Citation: Langpoklakpam, C.; Liu, A.-C.; Hsiao, Y.-...
Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. J. Phys. D Appl. Phys. 2019, 53, 045103. [Google Scholar] [CrossRef] De Luca, A.; Pathirana, V.; Ali, S.Z.; Udrea, F. Silicon on insulator thermodiode with extremely wide working temperature range. In ...