Floating gate transistor 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 浮栅晶体管 翻译结果2复制译文编辑译文朗读译文返回顶部...
半浮栅晶体管(semi-floating gate transistor) 更新时间:2024年12月20日 综合排序 人气排序 价格 - 确定 所有地区 实力供应商 已核验企业 在线交易 安心购 查看详情 ￥0.98/个 广东深圳 INFINEON英飞凌 IKD06N60RA IGBT 晶体管 600V Trenchstop RC Hard SW App, IGBT 深圳市特莱科技有限公司...
网络浮栅晶体管;浮闸晶体管;浮闸电晶体
Flash memory works by adding (charging) or removing (discharging) electrons to and from a floating gate. A bit's 0 or 1 state depends upon whether or not the floating gate is charged or uncharged. When electrons are present on the floating gate,currentcan't flow through the transistor, a...
The input gate electrodes 105-1 - 105-4 are separated fro the floating gate 103 via an insulated film 106. When the linearly added value obtained by multiplying the voltage V1 - V4 applied to the electrodes 105-1 - 105-4 by the prescribed weight exceeds the prescribed threshold value, ...
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery current is constant at high insulated-gate bipolar transistor (IGBT) switching rates and varies for low IGBT switching rates. In this paper, an analytical ... S Jahdi,O Alatise,L Ran,... - 《IEEE Transactions on...
In case of incidence X, light of energy h is directed externally through a floating gate to generate pairs of electron and hole. Electrons flow out to a drain side D and holes flow partially to the fixed gate PG and partially to the floating gate P to generate photocurrent (Iop). The ...
Embodiments in accordance with the present invention provide for forming floating gate transistor structures as well as the structures so formed. An exemplary method provides a substrate encompassing semiconductive material. A first layer is formed over the semiconductive material. At least one pair of ...
Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329–337 (2011). Article Google Scholar Wang, P. F. et al. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation. Science 341, 640–643 (2013). Article Google Scholar ...
The floating boom quick storing field effect transistor includes the source region, drain region, body and top grid. The top grid is composed of the poly crystalline silicon control grid and floating boom. Between the floating boom and the control grid and between the floating grid and the ...