一般来说,掺杂会降低导电高分子之能隙(Energy Gap),提升其导电度,且掺杂程度(Doping Level)愈高,其导电度愈大。而掺 … www.materialsnet.com.tw|基于11个网页 3. 掺杂度 找到正确组合的合金,确定正确的掺杂度(doping level),而且放置中间频带(intermediate band)也要正确,放在需要的地 … ...
At a specific point in a material, such as glass or a semiconductor, the concentration of dopant at that point. Note: The doping level usually in expressed in parts per million (ppm). See also dopant , glass , homojunction , point , semiconductor .Weik, Martin H.Springer US...
Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN 来自 Semantic Scholar 喜欢 0 阅读量: 79 作者:O. Lopatiuk-tirpak,L Chernyak,YL Wang,F Ren,SJ Pearton,K Gartsman 摘要: The electron irradiation-induced increase of minority carrier ...
CW performance of multiquantum-well (MQW) GaAs-AlGaAs lasers operating near 850 nm at 300 K is investigated as a function of the doping level in the p-cladding layer. Laser structures have been grown by metal-organic chemical vapor deposition using Zn diethyl as a carrier for acceptor dopant...
1e. We see that the doping level is well controlled under the sequential Rb deposition, in particular, it covers the lightly doped region (p ~ 0–0.04) which is the key range to keep track of the electronic structure evolution from the parent compound. This regime is the main focus of ...
values, the plasmon excitation energy increases towards larger{q}_{\perp }. At higher doping level, towards which the measured plasmon energy increases, the{q}_{\perp }actually reduces. Thus it is safe to conclude that the energy increase upon further doping is an intrinsic property of the ...
Enriched Doping Level and Tuned Fiber Fractal Dimensions in Nonwoven Carbon-Doped Polyaniline for Efficient Solid-State Supercapacitors S. Enriched Doping Level and Tuned Fiber Fractal Dimensions in Nonwoven Carbon-Doped Polyaniline for Efficient Solid-State Supercapacitors. Energy Technol. ... Kumar,...
Role of the sintering temperature and doping level in the structural and spectral properties of Eu-doped nanocrystalline YVO4. A sol-gel approach was employed to prepare nanosized YVO(4) nanopowders doped with Eu(3+) ions. Raw nanomaterials were thermally treated at 700-1000 掳C fo... RJ ...
Pressure-induced Mott transition in an organic superconductor with a finite doping level. Phys. Rev. Lett. 114, 067002 (2015). Article ADS CAS PubMed Google Scholar Suda, M. et al. Strain-tunable superconducting field-effect transistor with an organic strongly-correlated electron system. Adv....
The value of Eb increases with Si-doping level. This may result from suppression of the nonradiative recombination which is generally related to threading dislocation. Wet etching techniques are used to check that. As shown in Fig. 5, AFM images show a remarkable reduction of TDD with increase...