Two-dimensional properties, in particular, the density-of-states masses of holes in silicon and germanium doping superlattices, are determined by using self-consistent calculations and the effective mass approximation. Physical parameters of the doping superlattice such as the doping level of the n-...
Dependence of resonance states on doping level and doping distribution type in GaAs/Ga~0~.~7~5Al~0~.~2~5As superlatticeKatirciogluS.ErkocingentaconnectSurface Science Amsterdam
123% enhancement for Si0.89Ge0.11/Si0.94Ge0.06 superlattice [116]. The interdiffusivity models and data generated in Xia et al. [1] and Dong et al.’s [94,95] work have been widely used and implemented in the state-of-the-art process simulation tools including Intel’s in-house ...
Semiconductor superlattices can be fabricated by priodic variation of either composition (AlxGai1-xAs — GaAs, e.g.) or doping (n-i-p-i, e.g.). During the past decade they have proven as ideal model substances for the study of the electronic properties of two-dimensional quantum systems...
1.By using MATLAB software, the authors carry out simulation computation and optimization; and study in a deep-going way the effect of the change of doping density and external bias voltage on frequency and amplitude of self-sustained oscillation of doped GaAs/AlAs superlattice with weak coupling...
Two types of energy levels are distinguished, one due to valleys transverse to the superlattice axis, and the other due to longitudinal valleys. Minibands, potential profiles, miniband occupancies, and Fermi-level positions are studied and their dependence on the spacing d between δ layers and...
According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/ (GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg ...
3d. Owing to the polarization-induced band bending in p-AlGaN SLs, the acceptor level in the barriers is quite close to the sub-band level in the wells, which then provides an energetically favorable path for the activation of Mg. Fig. 3: Electrical properties of the desorption-tailored Al...
By using MATLAB software, the authors carry out simulation computation and optimization; and study in a deep-going way the effect of the change ofdoping densityand external bias voltage on frequency and amplitude of self-sustained oscillation of doped GaAs/AlAs superlattice with weak coupling. ...
At a given lattice constant, this parameter can be effectively influenced by using superlattices whose band edges can be changed by the choice of the superlattice period. We give examples of proposed device designs based on this approach, where the p- and n-cladding layers are different ...