Analysis of ESD failure due to parasitic vertical NPN opening in integrated circuits with N-substrate process This paper describes the electrostatic discharge (ESD) failure caused by parasitic BJT in N-substrate process. The study of ESD failures in P-substrate pro... G Wang,G Sun,S Qi,......
Avalanche robustness in dynamic operation is one of the main obstacles to further promote the commercialization of SiC MOSFETs. In this paper, a cell-level optimization design is proposed to suppress the avalanche failure caused by parasitic BJT activation. Several retrograde doping profiles with ...
Logic gatesare designed using symmetric lateral doping-free bipolarjunction transistor(BJT) on silicon on insulator (SOI) using differential pass transistor logic, and their performance matrices are presented. Charge carriers are induced in lightly doped emitter and collector regions using two unique appr...
;doping concentration in the th section re-sulting from the th iteration;dopant concentration resulting from the th iteration. After constraining the maximum doping concentration to the value at the emitter edge of the base and the minimum doping concentration to the doping level at the collector ...
We investigate the tunneling magnetoresistance via 未 doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 未 doping. Also, both the transmission probability and the ...
Under Moore’s law, metal–oxide–semiconductor field-effect transistors (MOSFETs) are scaled down, reducing the channel length of MOSFETs, which enhances the integration level and performance of the transistors. However, with the increase in the number of transistors in an integrated circuit or chi...