DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS IN InP/GalnAs GROWN BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION Indexing terms: Semiconductor devices and materials, Bipolar devices, Transistors, Vapour deposition Double-heterojunction bipolar transistor structures in... B Nauwelaers 被引量: 0发表: 1987年 加载更...
Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six ...
Excess doping of phosphorus, however, causes degradation in the transfer characteristics after heat treatment. The optimum doping level is obtained by depositing the n+-layer at 1 to 5Ã10¿3 molar ratios of PH3/SiH4.关键词: amorphous semiconductors doping profiles elemental semiconductors...
Based on results of measurement and processing of volt-ampere characteristics as well as linetic modeling of electron transfer by the Monte Carlo method, the influence of the doping level and the temperature on electron mobility in the n channel of a silicon MOS field-effect transistor operating ...
It is also found that a stable negative transconductance behavior can be created for the MoTe2 transistor by controlling doping position, then a frequency doubler is successfully demonstrated. Therefore, it is proposed that the positionヽontrolled local doping in multilayer MoTe2 may offer exciting ...
X-ray photoelectron spectroscopy (XPS) shows that TFSI–anions do not penetrate the PBTTT layer without Acr-Me+or with Acr-Me+in the dark. However, when irradiated with light, strong fluorine F(1s) and oxygen O(1s) XPS core level signals originating from TFSI–are observed (Fig.2c). Fu...
relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide ...
An LDD transistor is formed by using a process which insures that a layer of gate oxide is not inadvertently etched into and is not ruptured by static electrical charges. At least two thicknesses of gate electrode material of varying doping levels are fo
X-ray photoelectron spectroscopy (XPS) shows that TFSI–anions do not penetrate the PBTTT layer without Acr-Me+or with Acr-Me+in the dark. However, when irradiated with light, strong fluorine F(1s) and oxygen O(1s) XPS core level signals originating from TFSI–are observed (Fig.2c). Fu...
The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited ...