摘要: The communication presents a set of design curves of collector-emitter breakdown voltage BVceo versus gain hFE for various collector doping levels and thickness for n-p-n transistors. The results include epitaxial layer punch through and radial c-b junction breakdown....
Examines the importance of collector doping for double heterojunction bipolar transistors design. Sensitivity of direct current and radio frequency performance to collector doping level; Base-collector and collector-emitter breakdown voltages in 65-70 gigahertz range; Occurrence of conduction band potential ...
8.5b). Compared to a classical bipolar transistor with identical dimensions, the electrostatically doped device shows comparable collector current and higher gain, thanks to a much smaller base current. Instead of three different metals one can actually use the same one for emitter and collector. A...
Manufacture of a semiconductor array of integrated silicon-germanium heterobipolar transistors having a silicon collector layer, a silicon-germanium base layer, a silicon emitter layer and a silicon emitter contact layer includes depositing in a single uninterrupted process and simultaneously doping the co...
The portion of the semiconductor area of n-type conductivity located between these two regions constitutes the active base region. The invention is based on the fact that the active base region includes below the semiconductor surface and adjacent to the emitter region and to the collector region;...
value at the emitter edge of the base and the minimum doping concentration to the doping level at the collector edge of the base Fig. 1. Base profiles obtained using the iterative schemes (7), (8) with cm and cm . The neutral base ...
A high density dopant doping process is performed on an emitter surrounding portion of the divided regions by using carbon. The high density dopant doping process is performed on a collector surrounding portion of the divided regions by using zinc and beryllium. An upper base of the base(3) ...
forming an emitter diffusion mask on said epitaxial layer and said base region and having an opening therethrough, and diffusing a donor impurity through said emitter diffusion mask opening and into said base region to form an emitter region therein, ...
A base connection region is formed at the side of the base layer such that the intersection surfaces of the base/emitter/PN boundary layer and of the base/collector PN boundary layer with the surface of the semiconductor array are outside the silicon-germanium base layer. A silicon dioxide ...
Nevertheless, by carefully adjusting the growth parameters, very good DHBT (double heterostructure bipolar transistor) were grown, with and without a graded composition interface between base-collector and base-emitter using selenium as n-type dopant. A current gain of 5500 has been obtained for a...