The transistor includes (i) a first doped region in the first portion of the semiconductor substrate and having the first conductivity type (ii) a terminal, which includes a second doped region having a second conductivity type and located in the first portion of the semiconductor substrate and ...
Integrated horizontal unipolar transistor having a 优质文献 相似文献 参考文献 引证文献Integrated horizontal unipolar transistor having a doped layer forming an internal gate of the transistor and at least one integrated capacitor having a first electrode connected to a source of the transistor and a sec...
Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chipThe device uses the horizontal insulating region and the buried... Z Raffaele,M Salvatore 被引量: 0发表: 1989年 ...
In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region...
Electrochemical cells were then assembled in the neutralized state by shifting the potential of the polymeric electrode films into a region such that the polymeric electrode films were undoped and storing the polymeric electrode films in anhydrous propylene carbonate. FIG. 4 shows a cyclic voltammogram...
A method for making a photonic structure, including creating a first vapor stream of a first vapor material, the first vapor stream having a first non-uniform flux in at least one direction; and moving a substrate in at least a portion of the vapor stream. In addition, the method includes...
a channel region; a gate insulator; an electrically conductive gate electrode; source and drain regions; thick insulation over the source and drain and over the gate electrode except in the contact areas; field isolation or field shield regions between FETs of the integrated circuit; metallic-type...
The two doped regions form the source and drain of a power transistor. The regions lie in an active region surrounded by an insulation structure (102,1012) adjacent to a substrate main surface (103). A current flow between the two doped regions is controllable via the control electrode ...
1.An IGBT comprising at least one first type transistor cell, comprising:a base region, a first emitter region, a body region, and a second emitter region, wherein the body region is arranged between the first emitter region and the base region, and wherein the base region is arranged bet...
claimed in claim 15, wherein the contact connection arranged between the plurality of conductor segments and the first word line driver segment comprises a doped well, which is surrounded by an outer, oppositely doped well and is electrically insulated from a semiconductor region by the outer well...