Transistor including a deposited channel region having a doped portionUS7262463 Jan 23, 2004 Aug 28, 2007 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conduct...
The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating...
The transistor has three terminals, namely Base,Emitter, and Collector. The emitter is a heavily doped terminal and it emits the electrons into the Base region. The Base terminal is lightly doped and passes the emitter-injected electrons onto the collector. The collector terminal is intermediately...
The carbon material has an fcc crystal structure, shows a negative electron affinity, and is characterized by a peculiar hybridization of the valence atomic orbitals. Its bandgap (~6 eV) is typical for insulators, whereas the noticeable electrical conductivity (~0.1 S m−1) increases ...
The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. However, the lack of a clear physical picture and design rule for this device has led to numerous invalid fabrications. In this work, we address this issue based on an unexpectedly concise and insig...
A semiconductor detector structure consists of a unipolar or single- pole nsistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as...
Metal-oxide semiconductor field-effect transistors, also known as MOSFETs, have greater importance and are the most useful type among all transistors. The MOSFET has four terminals: drain, source, gate, and body or substrate. A MOSFET is also a voltage controlled Transistor, but the main differe...
1. A transistor comprising: a first layer having a primary surface; a well region including a channel region of the transistor, wherein the channel region is adjacent to the primary surface; a buried doped region spaced apart from the primary surface and the well region; a gate electrode dis...
It has been over twenty years since the linear scaling of reaction intermediate adsorption energies started to coin the fields of heterogeneous and electrocatalysis as a blessing and a curse at the same time. It has established the possibility to constru