Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS. The A exciton series ...
As a consequence of the dielectric and quantum confinement effect, they show strongly bound and stable excitons at room temperature. In this report, the band-edge exciton fine structure and in particular its exciton and biexciton dynamics in high quality crystals of (PEA)2PbI4 are investigated....
Mixing of the dark and bright excitons in an external magnetic field allows the direct optical recombination of the dark exciton ground state. The observed shortening of the luminescence decay time in CdSe nanoncrystals in a magnetic field is also in excellent agreement with the theory, giving ...
Polarization dependent piezoreflectance study of the band-edge excitons of ReS2 as a function of temperature in the range of 25 K ≤ T≤ 525 K is reported. The parameters that describe the temperature variation of the transition energies and boradening function of the excitons have been evaluate...
Stability of excitons in undoped C60 are studied from a molecular-solid point of view. The band edge of the electron–hole continuum is estimated theoretically to be located approximately at 2.0 eV. The predicted onsets for photoconductivity and optical absorption are found to be in a fair agreem...
We report the first well-resolved band-edge luminescence from excitons confined in fully strained SiGe quantum wells grown on Si. At liquid-He temperatures the photoluminescence is due to shallow bound excitons, and in addition to a no-phonon line, phonon-assisted transitions involving TA phonons ...
Interacting plexcitons for designed ultrafast optical nonlinearity in a monolayer semiconductor Article Open access 14 April 2022 Electrically tunable nonlinear polaritonic metasurface Article 23 December 2021 Introduction In nonlinear optics, it is well-known that the frequency conversion processes depend...
Abstract The carrier dynamics of donor-bound and free excitons, localized in the alloy disorder potential, were investigated for Mg x Zn 1 − x O ( 0.08 ... A Müller,M Stölzel,C Dietrich,... - 《Journal of Applied Physics》 被引量: 23发表: 2010年 Near-Band-Edge Photoluminescence...
S. Simple screened hydrogen model of excitons in two-dimensional materials. Phys. Rev. Lett. 116, 056401 (2016). Article Google Scholar Qiu, H. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 4, 2642 (2013). Article Google Scholar ...
excitonsgallium compoundsIII-V semiconductorsimpurity distributionimpurity electron statesluminescence of inorganic solidssegregationIn this study a comparison between GaP layers, grown by metalorganic vapour phase epitaxy on either (111) oriented GaP substrates or (001) oriented GaP substrates, is made ...