The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor depositionMETAL organic chemical vapor depositionMETALLIC filmsDISLOCATION densityOPTICAL spectroscopySAPPHIRESULTRAVIOLET-visible spectroscopy...
In addition to the neutral‐donor‐bound exciton transition (theI2line), a transition line at about 83 meV below the band gap has been observed in an epitaxial layer grown under a lower plasma power or growth rate. This emission line has been assigned to the band‐to‐impurity transition ...
The AgInS/InSand AgInS/GaS(=0.8–1.5) core/shell structures generate intense narrow-band photoluminescence originating from a band-edge transition at a wavelength shorter than that of the original defect emission. Microscopic analyses reveal that the GaSshell has an amorphous nature, which is ...
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The transition energy of B measured by μTR is about 1.894eV at 10K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct...
Transition oscillator strengths and the size dependence of the splittings have been calculated. Two of the five states, including the ground state, are optically passive (dark excitons). The oscillator strengths of the other three levels (bright excitons) depend strongly on crystal size, shape, ...
Furthermore, when the AgInS nanoparticles were coated with a gallium sulfide (GaS ) shell, the nanoparticles with both crystal phases emitted a spectrally narrow luminescence, which originated from the band-edge transition of AgInS . Tetragonal AgInS exhibited narrower band-edge emission (full width ...
The band-edge offset (BEO) in semiconductor heterostructures is the most crucial parameter for the interpretation and prediction of the physical properties of such a device. The different experimental procedures for obtaining the BEO are discussed. We ha
This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed.doi:10.1016/j.physb.2007.04.038Ricardo
Especially after doping with 3d transition elements, not only a large number of bulk defects are introduced, but also the local states in the electronic structure inhibit the carrier migration [105]. Also, it is hard to maintain charge balance when dopants are introduced into the host metal ...