Summary This document is part of Subvolume C 'Non-Tetrahedrally Bonded Elements and Binary Compounds I' of Volume 41 'Semiconductors' of Landolt-Brnstein - Group III Conddoi:10.1007/10681727_928O. MadelungU. RösslerM. Schulz (ed.)Springer Berlin Heidelberg...
We show that we can describe the transition to localization at the mobility edge using the self-consistent theory of localization based on the concept of a position-dependent diffusion coefficient.Similar content being viewed by others Isotropic gap formation, localization, and waveguiding in mesoscale...
The transition energy of B measured by μTR is about 1.894eV at 10K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct...
longitudinal stress field, which effectively enhances the band-edge light emission.Ab initiocalculations of interband transition probability provide a model showing that introduction of appropriate additional stress component in the longitudinal direction of GaN will improve the efficiency of band-edge ...
This assignment was supported by the apparent proximity between the E+ transition and the Nx resonant level extrapolated to low pressure and room temperature. Therefore, two new bands are created in GaAsN. The bonding state at low energy, E-, corresponds to the conduction band edge of GaAsN ...
The optimal doping level is defined as the integral of DOS from band edge to the energy level position corresponding to the maximum or the peak of power factor (see Fig. 8). For instance, the optimal n-type doping level for ZrNiSn is estimated to be +0.009 e/u.c. This indicates ...
Transition-region anomaly check. One element per band edge. Element values have the following meanings: 1 = OK , 0 = probable transition-region anomaly , -1 = edge not checked. Computed when you specify the 'check' input option in the function syntax. res.iterations Number of Remez iteratio...
At low uniaxial strains, changes in the band-gap absorption edge were consistent with the calculated band-gap shifts using the published deformation potentials. At high uniaxial strains, however, the published deformation potentials overestimated the shifts. This observation was confirmed by ...
The edge band is simple in structure, enveloping is convenient, the edge band can be attached to the cutting end face of the waterproof panel very well, wing faces are in smooth transition, and it can be ensured that a boss is not formed on the surface of the panel. During using, the...
For U(Nb4d) ≥ 4 eV, the dopant state upshifts to combine with the conduction band edge, which results in markable changes in the charge distribution (see Supplementary Table S2 online). Based on the consideration of the defect state energy distribution and charge carrier localisation, ...