thin film solar cellIn this paper we report on the properties of hydrogenated amorphous silicon oxide (a-SiO_x:H) deposited by VHF-PECVD at 40 MHz and we discuss the results on the application of this material as absorber layer in single junction p-i-n solar cells. The films have been...
The result has led to the conclusion that the peak of the gap-state distribution associated with doubly occupied dangling bonds (D) is located about 05 eV below the conduction band edge. The analysis for the pre-exponential factor of the thermal emission rate of electron from the D centre ...
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Figure 6. EELS spectra of a SZTO showing (a) the plasmon loss peaks and (b) the band-gap measurements at various Si contents. Note that as the silicon contents increases, the band-gap also increases. Figure 7. Calculated band-alignment energy diagrams indicating the relative energy ...
M. Matsui: Role of interchain interaction in determining the band gap of trigonal selenium: A density functional theory study with a linear combination of Bloch orbitals, J. Phys. Chem. 118, 19294–19307 (2014) CAS Google Scholar M. Hirayama, R. Okugawa, S. Ishibashi, S. Murakami, T....
This suggests that the Te, Si and Ge nano-clusters can make an important contribution to the optical band gap of amorphous Si–Ge–Te compositions. According to K. Tanaka12, the width of the conduction band is proportional with the average coordination number <r> , while the width of...
The optical band gap energies determined from UV Vis transmittance and reflectancespectra were found to be increasing function of the dilution. We deduce that optical band gaps expanse due to the decreasingdimensions of silicon nanocrystals. They were calculated to be of 2 – 4 nm which proves ...
Band gap of essentially fourfold-coordinated amorphous diamond synthesized from C60 fullerene. Phys. Rev. B 60, 6357–6361 (1999). Article ADS CAS Google Scholar Bundy, F. P. et al. The pressure-temperature phase and transformation diagram for carbon; updated through 1994. Carbon 34, 141–...
Understanding the relation between the time-dependent resistance drift in the amorphous state of phase-change materials and the localised states in the band gap of the glass is crucial for the development of memory devices with increased storage density.
FIG. 2B is a schematic diagram of relative positions of band edges relative to Fermi levels of various layers. Examples C and D are in accordance with the invention. DETAILED DESCRIPTION With reference to the drawings, FIGS. 1A and 1B illustrate hydrogenated amorphous silicon (a-Si:H) solar...