thin film solar cellIn this paper we report on the properties of hydrogenated amorphous silicon oxide (a-SiO_x:H) deposited by VHF-PECVD at 40 MHz and we discuss the results on the application of this material as absorber layer in single junction p-i-n solar cells. The films have been...
PURPOSE:To make the optical band gap of amorphous silicon controllable over a wide range in the stage of forming an amorphous silicon film on a substrate by photodecomposition of gaseous silane by adding and mixing a specific nitrogen compd. to and with the gaseous silane. CONSTITUTION:A substra...
Figure 6. EELS spectra of a SZTO showing (a) the plasmon loss peaks and (b) the band-gap measurements at various Si contents. Note that as the silicon contents increases, the band-gap also increases. Figure 7. Calculated band-alignment energy diagrams indicating the relative energy ...
Dependence of optical gap in a-Si:H on bonded hydrogen concentration. Journal of Non-Crystalline Solids 99, 89–96 (1988). 53. Kruzelecky, R. V., Ukah, C., Racansky, D., Zukotynski, S. & Perz, J. M. Interband optical absorption in amorphous silicon. Journal of Non-Crystalline ...
energy gapphotoconductivityphotoelectron spectrasilicon/ hydrogenatedamorphousphotoemissionphotoconductivityWe report photoemission results from which we directly determined the density of states g(E) in the gap of a-Si:H between the top of the valence band E v and the Fermi level. At 0.4 eV above E...
The result has led to the conclusion that the peak of the gap-state distribution associated with doubly occupied dangling bonds (D) is located about 05 eV below the conduction band edge. The analysis for the pre-exponential factor of the thermal emission rate of electron from the D centre ...
Photonic band engineering in opals by growth of Si/Ge multilayer shells The optimization of the procedure to grow accurate amounts of amorphous silicon and germanium by chemical vapor deposition (CVD) free of contamination in o... F Garcia-Santamaria,C Lopez,F Meseguer,... - Tuning the Optic...
siliconwide band gap semiconductors/ room temperature electric field induced crystallizationwide band gapa-Si:HOur results indicate that macroscopic areas (mm2) of thin films of hydrogenated amorphous Si (a-Si:H) with high hydrogen content (20–45 at.% H) can be crystallized very simply by ...
美 英 un.非晶硅 网络非晶矽 英汉 网络释义 un. 1. 非晶硅 例句 更多例句筛选
Lim JW, Shin M, Lee DJ, Lee SH, Yun SJ (2014) Highly transparent amorphous silicon solar cells fabricated using thin absorber and high-band gap-energy n/i-interface layers. Solar Energy Materials & Solar Cells 128:301–306 ArticleCASGoogle Scholar ...