Balberg, "Direct determination of the bandgap states in hydrogenated amorphous silicon using surface pho- tovoltage spectroscopy," Appl. Phys. Lett., vol. 67, no. 3, pp. 371-373, 1995.Fefer E,Shapira Y,Balberg I.Direct determination of the band-gap states in hydrogenated amorphous silicon...
It was quickly found that all research groups found their places, despite some regular intense discussions about whether crystalline silicon was the future or rather thin film. The field of the industrially interesting technologies was indeed so wide that there was little direct competition and each ...
band-engineering, device structures, and a monolithic 3D integration scheme based on quasi-single-crystal, direct-gap GeSn grown on dielectric layers.doi... J Liu - Integrated Photonics Research, Silicon & Nanophotonics 被引量: 0发表: 2014年 GeSn Optical Gain Media Towards Monolithic 3D Photonic...
A silicon carbide rod acts as radiation source providing photons in an energy range of 0.025–1 eV. The actually measured quantity is the signal from the DTGS intensity detector as a function of the interferometer mirror position. The signal vs. frequency spectrum results from a Fourier ...
The electron and hole transport in bandgap-engineered amorphous silicon/germanium alloys (a-Si,Ge:H,F) is studied using steady-state conductivity, time-of-flight and the voltage-bias dependence of the photocurrent. We investigate graded-bandgap structures and sawtooth multilayers. We find that in ...
In MPAT process, nonlinear absorption of the incident light is first initiated by multiphoton absorption which promotes an electron from the valence band to an intermediate excited state within the bandgap from which tunneling to conduction band takes place. In a-solids, such intermediate states are...
M. Dinu, F. Quochi, H. Garcia, Third-order nonlinearities in silicon at telecom wavelengths. Appl. Phys. Lett.82, 2954 (2003) ArticleCASGoogle Scholar S. Serna, H. Lin, C. Alonso-Ramos, C. Lafforgue, X. Le Roux, K.A. Richardson, E. Cassan, N. Dubreuil, J. Hu, L. Vivien,...
A photovoltaic apparatus includes a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe. The ratio of Si to Ge in the absorber layer...
Hydrofluorinated amorphous silicon films have been deposited from pentafluorodisilane and 1,1,1-trifluorodisilane by chemical vapor deposition. The films and gaseous by-products of the depositions were analyzed by IR spectroscopy. The optical bandgap of the films ranged from 1.85 to 2.87 eV as ...
amorphous silicon to lead sulfide quantum dot arrays32,33,34,35,36. Other methods to examine the electronic structure of amorphous PCM films such as x-ray or ultraviolet photoemission spectroscopy typically do not offer a sufficient energy resolution to observe distinct features of the bandgap37,38...