At 20 mTorr of N2 with most sputtered species thermalized, films exhibited both AlN (0002) and $$ (10\\overline{1} 1) $$ XRD peaks, with the AlN (0002) intensity initially increasing with ion energy above 15 eV, showing enhanced film quality with an optimum of 25 eV. At a lower ...
a XRD diffraction pattern with peak position annotation, b the X-ray rocking curve of symmetric (0001) reflection, c Raman spectra; the illustration is an enlarged view of E2(High), d the XPS survey scan, and the fitted XPS fine scans of e Al2p and f N1s Full size image Micro-area...
XRD analysis is aimed to verify the preferential orientation of the nitride film along the c-direction. Figure 1 shows the X-ray diffraction spectrum of the bilayer AlN/Ti bottom electrode sputtered on Kapton substrate The presence in the spectrum of the (0002) peak confirms the preferential ...
c 2θ-ω scan XRD rocking curve of the AlN thin film. d Surface of AlN thin film captured by SEM. e Cross-sectional view of deposited AlN thin film captured by SEM. f PAI experiment setup. Len 1: mirror; len 2: plano-convex lens; PC personal computer, SD & IA signal decomposition...
The peaks in the XRD patterns are very clean and clear. No new phases were found in the samples, indicating a good chemical stability of this system until a temperature of 1800 °C. However, the chemical stability slightly changed at 1900 °C, a very small peak seemly relating to a Al...
The origin of the peak around 2.1 eV is uncertain at present, but a possible origin will be discussed in the following paragraph. However, sufficient TL intensity in AlNNTs even at high temperatures (Fig. 3), with its high resistance to radiation, makes it a potential candidate as an UV ...
The phases present in the sintered bodies were confirmed via X-ray diffraction (XRD, Rigaku Corp., MiniFlex600). The morphology and dispersion of the secondary phases in the AlN ceramics were characterized by a multifractal analysis using binary images. This analysis was used to estimate the ...
线衍射(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和纳米压痕仪等对薄膜特性进行测试与分析。结果表明,φ(N 2 ) 对AlN薄膜的择优取向、结晶性、沉积速率与力学性能的影响都十分显著,对薄膜的微观结构和表面粗糙度也有 一定影响:随φ(N 2 )增大,薄膜的厚度和沉积速率逐渐减小,结晶性也发生显著变化;较高的φ(N...
(a) Structure of samples A, B and C. The nominal growth rate for the AlN buffer was 4.3 nm/min for the first 20 nm and 8.7 nm/min for the remaining 180 nm. XRD scans of the (b) symmetric (002) and (c) asymmetric (103) peaks for samples A, B and C. ...
According to the results obtained by X-ray diffraction (XRD) and TEM, the DD of AlN with Gr exhibits an anomalous sawtooth-like evolution during the QvdW epitaxy process and the values are consistently lower than that without Gr. More importantly, combining Raman analysis and first-principles ...