X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline ...
a XRD diffraction pattern with peak position annotation, b the X-ray rocking curve of symmetric (0001) reflection, c Raman spectra; the illustration is an enlarged view of E2(High), d the XPS survey scan, and the fitted XPS fine scans of e Al2p and f N1s Full size image Micro-area...
Furthermore, the peak position from GaN band-edge emission are shifted for the both directions, In the E || [1–100] direction, the emission peak is located at 3.401 eV, close to the peak position from c-GaN on c-plane sapphire. However, in the E || [-1-123] direction, the...
Obviously, this is an approximation based on the hypothesis that the peak position shift is only due to film’s strain. It is known that there are other factors which influence the shift18 that have not been considered in this preliminary study. Figure 1 XRD spectrum of the bilayer Ti(150...
The 3.4 eV peak is related to the defect created when oxygen substitutes for nitrogen in the AlN lattice [12,19] ,but its position can vary from 3.3 to 4.0 eV as the concentration of oxygen is changed. Strassburg et al. suggested that the nitrogen vacancies and Al interstitial point ...
Here, Is(100) is the (100) XRD peak intensity of the spherical powders, Is(002)is the (002) XRD peak intensity of the spherical powders, Ip(100) is the (100) peak intensity of the AlN platelet powders and Ip(002) is the (002) peak intensity of the AlN platelet powders. The ...
substrate, and the substrate position. The microstructures and morphology of AlN nanostructures were characterized by X ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical properties
Investigation by X-ray diffraction (XRD) reciprocal space mapping (RSM) shows a strong dependence of the AlN peak position on the V/III ratio indicating a significant change in the lattice constants. Results from micro-Raman spectroscopy measurements verify that the AlN in-plane strain can be ...
(a) Structure of samples A, B and C. The nominal growth rate for the AlN buffer was 4.3 nm/min for the first 20 nm and 8.7 nm/min for the remaining 180 nm. XRD scans of the (b) symmetric (002) and (c) asymmetric (103) peaks for samples A, B and C. ...
The AlN (0002) XRD peak intensity as a function of the delay time is plotted in Fig. 4(b). It is seen that the XRD peak intensity decreases significantly with the delay time, but is still higher than that of the standard AlN layer without the ALA treatment as the delay time is ...