The (111) diffraction peak from the XRD θ–2 θ patterns shows a variation either on peak width or on peak position, indicating the variation of grain size and lattice constant. The calculated lattice constant reveals a mixture of different phases whose structures are similar to TiN. The ...
Its position also changes from 1368 to 1355 cm−1, indicating the formation of larger and more symmetrical/less defective aromatic systems. The obtained Raman results are consistent with those of ATR spectra and XRD patterns and, together, create a complete and coherent picture of structural chan...
Operando XRD analysis was carried out to study the phase transition during the first lithiation/delithiation process, which was performed in a transmission mode using a STOE diffractometer with a position-sensitive detector and Cu Kα1 radiation with the wavelength (λ) of 1.5406 Å, operating ...
h Relative Bragg intensities observed for silicon and GaSb planes in the composite fibres compared to powder spectra (count number for highest fibre XRD peak in parentheses), and i comparison of variation in intensities of the {220} Bragg peaks, during rotation, for a pure GaSb fibre (black)...
In the XRD spectrum, only Ag(002) and Ag(004) peaks were observed along with the Si(004) peak that belongs to the substrate. Due to the larger x-ray beam size (250 μm × 250 μm), the XRD show the macroscopic ordering. Hence, the XRD data confirms the presence of ...
byhot2wireCVD()HWCVDatlowsubstratetemperature.XRDandRamanspec troscopywereusedtoanalyzethestructuralpropertiesofthefilms.Itwasfound thatahighqualityhomoepitaxialSifilmisobtainedonSi-1()111substrateat200?. ThepeakpositionoftheRamanspectrumforthefilmisat521.0cmand ...
Table 3. Results of high-resolution XRD diffraction. Sample Composition, x Lattice parameter aν, Å Strain coefficient of the alloy, ε EM2350 T = 800; flow = 0; carrier = 3.6 × 1016 GaAs 5.6533 — EM2346 T = 800; ...
Additionally, we observed the shift of ν∼ −1 the peak position of the TO-like peak at ¯ 480 cm to higher wavenumbers with increasing the deposition tem- perature. This shift is also associated with the decrease in the average bond-length when compared to c-Si and also acts as ...
(d) XRD pattern. The slight shift in peak position in (d) is due to small differences in chemical composition of Mo(Si,Al)2 being analysed and the Mo(Si,Al)2 material which the XRD card was based on (PDF 00-057-0374). (For interpretation of the references to colour in this ...
The position where dC/dV = 0 V is ascribed to the electrical junction which is an interface inside the space charge region where n-doped and p-doped sides have balanced influences on the tip. On a beveled sample, the electrical junction is disturbed due to the redistribution of the ...