The variation of the XRD d 100 peak position, BET and HRTEM properties with [TEOS]/[water glass] ratio revealed that a ratio=3.95 gave optimal production of the highly ordered materials. The data suggests that water glass acts as a structure-directing agent for the TEOS and is incorporated ...
XRD pattern also shows the (110) peak of atomic layer deposited (ALD) HfO2 and the (100) peak of Si. The HfO2 films grown at 250°C by ALD was amorphous. However, the BT-BCN was deposited onto HfO2/Si at 750°C in an O2 ambient immediately after deposition of HfO2 films. ...
Its position also changes from 1368 to 1355 cm−1, indicating the formation of larger and more symmetrical/less defective aromatic systems. The obtained Raman results are consistent with those of ATR spectra and XRD patterns and, together, create a complete and coherent picture of structural ...
Operando XRD analysis was carried out to study the phase transition during the first lithiation/delithiation process, which was performed in a transmission mode using a STOE diffractometer with a position-sensitive detector and Cu Kα1 radiation with the wavelength (λ) of 1.5406 Å, operating ...
XRD and SAED confirm the macroscopic and microscopic coherent nature of the Ag nanostructures, respectively. Figure 2 X-TEM Micrographs of 2 nm Ag/17 nm GeOx/SiOx/Si (100) (a) Low Mag of as-deposited (b) Low Mag of 800 °C annealed in air (c) HR-XTEM depicts endotaxial ...
The micro strain is the root mean square of the differences in the lattice parameters across the sample, which results in a broadening of the XRD lines without changing the peak position. The fraction of layers which exhibit stacking sequence faults in each crystal is known as the stacking ...
The analysis of the reciprocal space maps (Figure 1) leads to the conclusion that epitaxial solid solution growth is coherent on GaAs (100) substrates, and samples have a small stress and composition gradient in the epitaxial layers, which is evidenced by the position and shape of nodes in re...
用XRD和Raman谱对其结构性能-1()进行了分析。结果表明:在衬底温度200? 时,Si111单晶衬底上外延生长出了Raman峰位置为521.0cm;X-1()()射线半峰 宽FWHM为5.04cm。结晶质量非常接近于体单晶的111取向的本征Si薄膜;在 衬底温度为300-1()?时,在Si100单晶衬底上异质外延,得到了Raman峰位置为 ...
Some degree of polycrystallinity was observed in the GaSb XRD after laser segregation, and EBSD confirmed this. Unlike the silicon recrystallization, where there was a moving solvent to prevent competing nucleation, the GaSb solidification occurred while the laser was held at the final position and ...
FIG. 8 presents an XRD pattern illustrating a comparison between a Gd2O3(400) peak of the as-grown and the annealed samples according to one embodiment. FIG. 9A presents an x-ray diffraction (“XRD”) pattern illustrating a polycrystalline of gadolinium oxide, Gd2O3(100), grown on n-type...