After annealing, both Si and SiC nanocrystals were clearly observed from TEM image and evaluated from XRD results. Peak position of Raman results are more blue shifted from Si reference wafer position in RTA samples (=5.4 cm-1) compare with furnace annealing samples (=2 cm-1), indicating ...
aHRTEM images and SAED pattern of multiple crystalline SiNWs.bViolin plot showing diameter distribution as determined from HRTEM.cX-ray diffraction pattern of the vertically aligned SiNWs on (100) Si substrate. The strong (400) peak is from the (100) silicon wafer substrate.dThe relationship be...
Thus, the peak position reflects the tensile stress on the epi Si film, which might arise due to lattice mismatch or thermal expansion coefficient difference between the epi Si and the ALD BeO film. The full width at half maximum (FWHM) of the epi Si and bare Si Raman peaks were ...
Meanwhile, the intensity of the Raman peaks of the electrolyte remains almost invariant, which indicates that this change of silicon Raman peak is related to the electrochemical reaction. It can be seen from Fig. 6b–d that the peak position (Xc), full-width at half-maximum (FWHM) of the...
Based on the XRD patterns, the short heating time did not result in the formation of crystalline silicon and the powder contains the amorphous SiOx phase dominantly. The uniform carbon layer was formed around the SiOx core with the average thickness of 10 nm based on the energy dispersive ...
This peak is dominant because this orientation has the lowest free energy [13]. The other less intense peaks, observed at angles 47.2° and 56.2°, are assigned to the (2 2 0) and (3 1 1) planes, respectively [14]. On the other hand, the XRD spectrum of sample (c) is typical ...
The XRD patterns of the film exhibited sharp peaks. These peaks did not completely match the standard XRD patterns of neither bulk Si nor the starting material CaSi2, implying the formation of new crystalline phases. The sharp peak at 17.24° might correspond to the periodicity of modifier ...
We checked the X-ray position using the X-ray fluorescence of diamonds before heating. Therefore, the X-ray and heating areas were aligned well. Temperature measurements were made by using the spectrographic method, in which the radiation from the heated sample was used for the determination of...
3.1.5 McBSP: XRDY Bit can Hold the Not-Ready Status (0) if New Data is Written to the DX1 Register Without Verifying if the XRDY Bit is in its Ready State (1) Revisions Affected: 0, A, B, C If the XRDY bit is used to properly gate writes to the DX2/DX1 registers, this ...
3.1.5 McBSP: XRDY Bit can Hold the Not-Ready Status (0) if New Data is Written to the DX1 Register Without Verifying if the XRDY Bit is in its Ready State (1) Revisions Affected: 0, A, B, C If the XRDY bit is used to properly gate writes to the DX2/DX1 registers, this ...