Koelmans, "A tin oxide field-effect transistor," Solid-State Electronics, vol. 7, no. 9, pp. 701-702, Sep. 1964.H. A. Klasens and H. Koelmans.A tin oxide field-effect transistor. Solid State Electronics . 1964H. A. Klasens and H. Koelmans, "A tin oxide field-effect ...
An ISFET with reference electrode is similar to Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), except that the ISFET has exposed the gate insulator to measure a selected ion concentration in electrolyte. When the pH-ISFET is immersed in an aqueous solution, a surface potential is ...
metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor, silicotungstic acid film immobilized on the tin oxide film which is coated on substrate; detect alkaloid concentration in solution; low cost, high sensitivity of ion sensitive films, accurate measurement, rapid response time...
Nickel/indium tin oxide thin filmExtended gate-field effect transistorNon-enzymatic glucoseChemical environmentsGlucose sensitivityThis study involves the potential application of Ni/ITO thin film as a non-enzymatic glucose (NEG) sensor. The Ni thin film was deposited onto ITO substrate using DC ...
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Its magnitude is much smaller than that of LSESG2 because G1 is further from QD2 than G2 and its field effect is partly screened by the hole gas beneath. The numerically calculated LSESG1 (solid line) reproduces reasonably well the order of magnitude but not the angular dependence of the...
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The authors have demonstrated the fabrication of monolayer graphene-based organic field-effect transistors (GOFETs) by using a thermally-treated exfoliation technique that produced a large, high-quality graphene sample with a production rate higher than that of the graphene produced by using the origin...
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