The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V−1 s−1, ultralow off-state current (IOFF) down to about 1 pA μm−1, high on/off current ratios (ION...
These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2...
随着进一步优化,可以在工业兼容的介电衬底(例如CaF2/Si和MgO/Si)上实现高密度垂直2D鳍片-氧化物异质结阵列的精确位置生长,2D FinFET和VGAA FET将实现进一步的晶体管缩放,并有望扩展摩尔定律。 文献信息 2D fin field-effect transistors integrated with epitaxial high-k gate oxide (Nature, 2023, DOI:10.1038/s...
目前,这一研究成果在国际顶级期刊Nature上发表(题目为2D fin field-effect transistors integrated with epitaxial high-κgate oxide),文章同时被Science Bulletin和Science China Chemistry进行亮点报道。 据介绍,这一原创性工作突破了后摩尔时代高速低功耗芯片的二维新材料精准合成...
原文详情：Yu, M., Tan, C., Yin, Y. et al. Integrated 2D multi-fin field-effect transistors. Nat Commun 15, 3622 (2024).https://doi.org/10.1038/s41467-024-47974-2 【近期会议】10月30-31日，由宽禁带半导体国家工程研究中心主办的“化合物半导体先进技术及应用大会”将首次与大家在江苏·...
Negative-capacitance field-effect transistors (NC-FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy-efficient devices. However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10mV dec-1) and small-hysteresis...
文章以“Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2Contacts”为题发表在著名期刊Advanced Functional Materials上。 图文导读 图1. (a&b)单层MoS2和单层MoS2...
这一进步将促进2D多鳍FETs的大规模集成,从而进一步推动2D晶体管的尺寸缩放。原文详情:Yu, M., Tan, C., Yin, Y. et al. Integrated 2D multi-fin field-effect transistors. Nat Commun 15, 3622 (2024). https://doi.org/10.1038/s41467-024-47974-2...
2D fin field-effect transistors integrated with epitaxial high-κ gate oxide. Nature 616, 66–72 (2023). CAS PubMed Google Scholar Wu, J. et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotech. 12, 530–534 (2017). ...
Multi-channel 2D fin field-effect transistors based on epitaxially integrated 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructures were fabricated, exhibiting an on/off current ratio greater than 106, high on-state current, low off-state current, and high dur- ability. 2D multi-fin channel arrays ...