随着进一步优化,可以在工业兼容的介电衬底(例如CaF2/Si和MgO/Si)上实现高密度垂直2D鳍片-氧化物异质结阵列的精确位置生长,2D FinFET和VGAA FET将实现进一步的晶体管缩放,并有望扩展摩尔定律。 文献信息 2D fin field-effect transistors integrated with epitaxial high-k gate oxide (Nature, 2023, DOI:10.1038/s...
The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270 cm2 V−1 s−1, ultralow off-state current (IOFF) down to about 1 pA μm−1, high on/off current ratios (ION...
These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2...
1.本文首次提出了一种 ledge-guided epitaxy 方法，成功在不同绝缘基底上生长了高密度、单向的二维（2D）鳍阵列，用于制造集成的2D多鳍场效应晶体管（FETs）。2.通过此方法，研究人员能够控制2D Bi2O2Se鳍阵列的成核位置和方向，实现了最小鳍间距为亚20纳米的高密度平行2D鳍阵列的生长。3.实验结果表明，采用 le...
目前,这一研究成果在国际顶级期刊Nature上发表(题目为2D fin field-effect transistors integrated with epitaxial high-κgate oxide),文章同时被Science Bulletin和Science China Chemistry进行亮点报道。 据介绍,这一原创性工作突破了后摩尔时代高速低功耗芯片的二维新材料精准合成...
这一进步将促进2D多鳍FETs的大规模集成,从而进一步推动2D晶体管的尺寸缩放。原文详情:Yu, M., Tan, C., Yin, Y. et al. Integrated 2D multi-fin field-effect transistors. Nat Commun 15, 3622 (2024). https://doi.org/10.1038/s41467-024-47974-2...
这一进步将促进2D多鳍FETs的大规模集成,从而进一步推动2D晶体管的尺寸缩放。原文详情:Yu, M., Tan, C., Yin, Y. et al. Integrated 2D multi-fin field-effect transistors. Nat Commun 15, 3622 (2024). https://doi.org/10.1038/s41467-024-47974-2...
文章以“Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2Contacts”为题发表在著名期刊Advanced Functional Materials上。 图文导读 图1. (a&b)单层MoS2和单层MoS2...
it was rarely reported due to the challenge in the growth of 2D semiconductors vertical to the substrate. When looking back into the development of Si-based metal oxide semiconductor field-effect transistors (MOSFET), fin (Figure 1a) and gate-all-around (GAA) structures are strategies applied ...
2D fin field-effect transistors integrated with epitaxial high-κ gate oxide. Nature 616, 66–72 (2023). This article reports 2D fin-shaped field-effect transistors. Article Google Scholar Chung, Y. Y. et al. First demonstration of GAA monolayer-MoS2 nanosheet nFET with 410μA μm ID 1...