金属氧化硅场效应晶体管(Metal Oxide Silicon Field Effect Transistor). MTBF: 平均故障间隔时间(Mean Time Between Failure). …www.dianyuan.com|基于4个网页 2. 金属氧化物硅场效应晶体管 ...合理解释的人.在研究开发后来称之为MOSFET——金属氧化物硅场效应晶体管(Metal Oxide Silicon Field Effect Transistor...
metal oxide semiconductor field0effect transistor 【电】 金属氧化物半导体积分电路 field effect transistor 场效晶体管 field effect semiconductor laser 场效应半导体激光器 multichannel field effect transistor 多沟道场效应管 field effect transistor (FET) 场效应晶体管 silicon field effect transistor 硅...
High-voltage metal oxide silicon field effect transistor (MOSFET) structure一种制造高压MOSFET的方法,包括:在半导体衬底中形成第一和第二导电阱;在所述第一和第二导电阱中分别形成漂移区;在所述第一和第二导电阱之间的衬底表面上生长隔离膜;形成栅绝缘膜;在第一和第二导电阱上的栅绝缘膜上形成栅;在与所述...
Henry Radamson, Lars Thylén, in Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements, 2015 Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors The metal oxide semiconductor field effect transistor (MOSFET) is the most basic element of integra...
Metal-oxide-semiconductor field-effect transistor 来自 百度文库 喜欢 0 阅读量: 34 申请(专利)号: US20040860509 申请日期: 2004-06-04 公开/公告号: US2005012114A1 公开/公告日期: 2005-01-20 申请(专利权)人: HIROMI TADA;YOSHIAKI AIZAWA;TOSHIMITSU KATO 发明人:...
(MOSFET) A Field Effect Transistor in which the conducting channel is insulated from the gate terminal by a layer of oxide. Therefore it does not conduct even if a reverse voltage is applied to the gate. This article is provided by FOLDOC - Free Online Dictionary of Computing (foldoc.org)...
A power metal oxide silicon field effect transistor in which sources are connected to each other, a single source supplies electrons to two channels, a contact surface between the source and a channel is variously changed to be maximized such that large current flows in a small area, and an ...
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREFOR The present invention relates to: a MOSFET device which is applicable to a semiconductor device and, particularly, is manufactured using silicon carbide; a... H Lee,S Jang,J Kim 被引量: 0发表: 2021年 ...
3.3 Metal-Oxide-Silicon Field Effect Transistor The MOSFET is the building block of the current ultra large-scale integrated circuits (ICs). The growth and complexity of MOS ICs have been continually increasing over the years to enable faster and denser circuits. Shown in Figure 3.7 is the simp...
7. The method of claim 1, wherein the providing step is such that the metal-oxide-silicon field effect transistor, another metal-oxide-silicon field effect transistor, yet another metal-oxide-silicon field effect transistor, and still yet another metal-oxide-silicon field effect transistor are P...