4H-SiC上镀4H-SiC薄膜P型(4H-SiC?Epitaxial?Film?on?4H-SiC,?P?type) 常规尺寸: dia4“ ±0.5 mm x 0.525 ±0.025 mm 技术参数: 4H-SiC薄膜晶向:<0001> 4H-SiC薄膜厚度(film target thickness):4.3um ±10% 4H-SiC薄膜厚度(film target doping layer) :1.4E17/cc +0% /- 30% ...
由于在控制4H-SiC外延层厚度,掺杂,生长速度和晶体质量方面的众多优点,CVD法已被广泛用于4H-SiC的外延生长。原位刻蚀是CVD外延工艺中的一个重要参数,但是却常常被忽略。在外延工艺之前,为了使衬底表面更平整,消除衬底表面的缺陷,也会有意的加入一段时间的原位刻蚀过程,因此原位刻蚀的研究对外延生长质量有极其重要影响...
具有刻蚀微孔结构的4H-SiC紫外光电探测器及制备 具有刻蚀微孔结构的4HSiC紫外光电探测器及制备,所述4HSiC紫外光电探测器包括P层,吸收层和P层环形电极,还包括设于P层环形电极的内周的微孔,其从P层刻蚀到达吸收层的上表面,微孔的壁面设有钝化层.当紫外光入射到探测器芯片上时,一部分被P层吸收或者反射;另一......
With analysis on internal carrier transport mechanism in silicon carbide (SiC), an improved analytical model for dc current voltage and small signal parameters of 4H-SiC metal-semiconductor field effect transistor (MESFET) is proposed considering carrier velocity saturation and charge controlling. Incomple...
The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design...
选用二氧化硅抛光液抛光4H导电SiC晶片表面,探究影响SiC晶片表面质量的关键参数,获得更高的去除效率和表面质量。实验结果表明,SiC表面的氧化是氢氧根离子和双氧水共同作用的结果。保持压力不变并增加氢氧根离子或双氧水的含量,SiC表面去除速率先增加后保持不变。在更大的压力下增加氢氧根离子的含量,SiC表面的抛光去除速率进一步...
研究了辐照对4H-SiC纵向双注入金属氧化物场效应晶体管(VDMOS)电学参数的影响.通过SRIM和SILVACO软件仿真,观察到器件不同区域引入损伤后电学参数的漂移.仿真结果表明,不同区域的损伤会造成器件电学参数不同的退化.器件JFET区的非电离损伤会使器件的导通电阻增大,而靠近碰撞电离中心的非电离损伤会使器件...