Band structureSilicon ROICWhen the operating temperature rapidly reduces from room temperature to 77 K, the band structure of InAs/GaSb superlattices device will be affected by thermal strain. Two strain models of the InAs/GaSb superlattices device with and without substrate are designed and ...
using a bandstructure–engineered photo–generated carrier extractor. The 100% cut–off wavelengths of theses BECX photodetectors were ~2.1 μm at 150K and ~2.4 μm at 300K. The visible cut−on wavelength of the BECX devices
Visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor based on type-II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down...
是能带台阶的一种，半导体和半导体或金属接触的时候会出现能带台阶，包括导带台阶和价带台阶，然后根据台阶...
Through characterization by XRD, XPS, SEM, TEM, BET, photoelectrochemical experiments, UV-visible diffuse reflection, and PL spectroscopy, the charge transfer mechanism and band gap positions for the composite photocatalysts were analyzed. The Type-II and all-solid-state Z-scheme heterojunction ...
Constructing van der Waals heterostructures is an efficient approach to modulate the band structure, to advance the charge separation efficiency, and thus to optimize the optoelectronic properties. Here, we theoretically investigated three type-II heterostructures based on perfect phosphorene and its doped...
b, Left: 3D structure of a unit cell (boundaries are indicated by black lines). The lattice constant along all directions is a. Right: Illustration of the two orthogonal screw symmetries Sx and Sy in top-down view. c, Photonic band structure for εb = 16, l = 0.5a, w = 0.2a, ...
As a peculiar member of TMDCs, PtSe2 has both the properties of semiconductors and of metals, excellent photoelectric properties, high carrier mobility, and layer-dependant band structure [33,34]. It has been extensively studied and reported that the constructing heterojunction with ZrSe2 [35], ...
Our results proved that type I or type II band alignment can be controlled by both GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of the QD structure. The simulation of electron structure in InAs QDs...
S. Tehrani, J. Shen, and H. Goronkin, “Three Terminal Quantum Structure Based on Resonant Interband Tunneling”, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, US, New York, IEEE, Aug. 7, 1995, pp. 460-464. ...