Fig, 2 Band structure,f 7>7 SiNW (a)~termina-ti(n) (b) F terminati,n Fermi level is set t, 0eV. 图3给出了7>7硅纳米线价带边的电荷密度等高线. ~饱和的硅纳米线9价带顶对应的电荷密度主要集中于纳米线中心部分的硅原子之间9也就是说纳米线的价带边主要来自纳米线中心的Si,Si 键.而F饱和...
The Electronic band structure of Si/SiO2-superlattices: A First-Prin ciples study [J]. Phys. Stat. Solidi, 2000, 182:1-3.Punkkinen M P,Korhonen T,Kokko K,et al.The Electronic band structure of Si/SiO2-superlattices: A First-Principles study. Physica Status Solidi . 2000...
In this work, the electronic structure near the f-point and interband optical matrix elements of strained Sn and SnGe quantum dots in Si or Ge matrix are calculated using the eightband k· p method, and the competing L-valley conduction band states were found by the effective mass method....
VASP计算系列_入门Si算例_BandStructure计算 本文将使用Si为例子,讲解如何设置输入文件,使用VASP进行band structure计算。需要准备四个输入文件,分别是CHGCAR、POSCAR、POTCAR、INCAR以及KPOINTS。 个人习惯 个人习惯是在scf步的目录下建立一个新的目录,用于band structure计算,相关命令如下: mkdir band cp INCAR KPOINTS PO...
A 30-band k·p method taking into account spin-orbit coupling is used to describe the band diagram of Ge, Si, and GaAs over the whole Brillouin zone on an extent of 5 eV above and 6 eV under the top of the valence band. The band diagrams provide effective masses in agreement with ...
关键词: Surface states band structure electron density of states Photoemission and photoelectron spectra Low-energy electron diffraction and reflection high-energy electron diffraction DOI: http://dx.doi.org/10.1103/PhysRevB.68.245316 被引量: 45 ...
We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by ann...
Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si Doping-induced energy shifts of the lowest conduction band and the uppermost valence band have been calculated for n -type 3 C - , 2 H - , 4 H - , 6 H -... C Persson,U Lindefelt,BE Ser...
Energy Band Structure of SiO(2)/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer et al. (2011) Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer. Mater. Sci... H ...
Strain Profile and Size Dependent Electronic Band Structure of GeSn/SiSn Quantum Dots for Optoelectronic Application The compatibility of group IV elements with Si CMOS fabrication technology has enabled us to integrate both optical and electronic components onto a single microchip [1] providing faster ...