Using the linear augmented cylindrical wave method in the muffin-tin approximation, we have calculated the band structure of ( n, n ) and ( n , 0) silicon carbide nanotubes for n = 5–10. In the range n = 7–10, ( n, n ) nanotubes are semiconductors, and their band gap decreases...
The Electronic Energy Band Structure of Silicon and Germanium This article, which is of a tutorial character, is concerned with three broad subjects: (a) the theory of electronic energy bands in a perfect crystal; (b)... Herman,F. - 《Proceedings of the Ire》 被引量: 10发表: 2007年 Ba...
Projectability disentanglement for accurate and automated electronic-structure Hamiltonians (精确和自动化电子结构哈密顿量的可投影解纠缠) Junfeng Qiao, Giovanni Pizzi & Nicola Marzari Abstract Maximally-localized Wannier functions (MLWFs) are broadly used to characterize the electronic structure of materials....
The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, ...
Quasiparticle band structure of silicon carbide polytypes The ab initio pseudopotential method within the local-density approximation and the quasiparticle approach have been used to investigate the electronic exc... B Wenzien,P Käckell,F Bechstedt,... - 《Solid State Communications》 被引量: 162...
Energy-band structure in strained silicon: A 20-band k·p and Bir–Pikus Hamiltonian model. A strain Bir-Pikus Hamiltonian H[sub st], associated with a 20-band sp³s* k·p Hamiltonian H[sub kp], is used to describe the valence band and the first... Richard,Soline,Aniel,... - ...
Haurylau et al, Optical Properties and Tunability of Macroporous Silicon 2-D Photonic Bandgap Structures, Phys. Status ... M.,Haurylau,A.,... - 《Physica Status Solidi》 被引量: 30发表: 2005年 Photonic band structure of oxidized macroporous silicon We investigated theoretically the effect of...
This updated review summarizes the main theoretical approaches to model porous silicon electronic band structure, comparing effective mass theory, semiempirical and first-principles methods. In order to model its complex porous morphology, supercell, nan
et al. (2011) Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer. Mater. Sci... H Watanabe,T Kirino,Y Kagei,... - Silicon Carbide & Related Materials 被引量: 0发表: 2011年 Triangular Mott-Hubbard Insulator Phases...
The strain tensor arising from uniaxial stress along an arbitrary direction on the (001) surface of Si is calculated. With these uniaxial strain tensor, the band structure of silicon material under arbitrary uniaxial stress on the (001) surface is calcul