First principles calculation based on density functional theory(DFT) with the generalized gradient approximation(GGA) are carried out to investigate the energy band gap structure on silicon(Si) and germanium(Ge) nanofilms. Simulation results show that the band gaps in Si(100) and Ge(111) ...
Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium. Physical Review Letter 102, 236804 (2009). Article CAS ADS Google Scholar Zhu, F. F. et al. Epitaxial growth of two-dimensional stanene. Nature Materials 14, 1020 (2015). Article CAS ADS Google Scholar Zhu, Z. & ...
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The direct gap property may be brought about by the alloy composition alone or combined with the influence of...
Theoretical or Mathematical, Experimental/ band structure germanium alloys IV-VI semiconductors silicon alloys tin alloys/ band structure calculation GeSn SiSn zinc-blende structures empirical pseudopotential inversions asymmetry ionicity direct band gap indirect gap material semiconductor materials optical material...
These compounds all appear to have a similar valence band structure. The band, as in germanium and silicon, is degenerate at the center of the zone, there being a heavy-hole band and a light-hole band, and also a third band split off by the spin–orbit interaction. The maxima of the...
Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium. Phys. Rev. Lett. 102, 236804 (2009). 26. Şahin, H. et al. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations. Phys. Rev. B 80, 155453 (2009). 27. Aufray...
The iterative-two-dimensional-two-band model can be gen- eralized to study other two-dimensional narrow-gap systems, for example lead telluride thin films and silicon-germanium alloys thin films. The model can also be modified to study one-dimensional narrow-gap systems such as Bi1-xSbx ...
The authors present the first self-consistent band-structure calculations for SixGe1-xalloys made using the virtual-crystal approximation. The theory is ba... M Podgorny,G Wolfgarten,J Pollmann - 《Journal of Physics C Solid State Physics》 被引量: 0发表: 1986年 Silicon-germanium interdiffusion...
Results of total magnetic cross-section calculations for silicon and germanium based on an empirical pseudopotential description of the electronic band structure are presented and analyzed in terms of proposed experiments in the eV range. In addition, some preliminary results from magnetic scattering ...
speculationsMagnetoresistance measurements of n-type germanium-silicon single crystals reveal a change in band structure occurring at about 14% silicon content... M Glicksman - 《Physical Review》 被引量: 45发表: 1955年 Ballistic transport and electroluminescence in IIB–VI and IIA–VI compounds It ...