Energy-band calculations are made for the three valence bands in silicon and germanium in terms of the cyclotron resonance parameters. The energy in the band measured from k = 0 is not assumed small compared to the spin-orbit splitting so that parabolic bands do not result. The above ...
ThePN-junction diodeis made up of two adjacent parts of two semiconductor materials like p-type and n-type. These materials aresemiconductorslike Si (silicon) or Ge (germanium), including atomic impurities. Here the type of semiconductor can be determined by the kind of impurity there. The pr...
In the aboveenergy banddiagram, the conduction band is empty whereas the valence band is filled totally. Once the temperature is increased, some heat energy can be supplied to it. So the electrons from the valence band are supplied toward the conduction band by leaving the valence band. Energ...
→Hencetheapplicationofasmallamountofvoltageresultsalargeamountofcurrent.Semiconductors:-→Thematerials,inwhichtheconductionandvalencebandsaresepareatedbyasmallenergygap(1eV)asshowninfigurearecalledsemiconductors.→Siliconandgermaniumarethecommonlyusedsemiconductors.→Asmallenergygapmeansthatasmallamountofenergyis...
Examples of indirect band gap semiconductor materials are silicon (Si), germanium (Ge), aluminum arsenide (AlAs) and gallium phosphide (GaP). Because of the reduced absorption coefficients, silicon layers in photodiodes and photovoltaic cells, for example, need to be substantially thicker – often ...
The reaction principles and structural design of carbon materials, various transition metal oxides, silicon and germanium are summarized, and then the progress of other anode materials are analyzed. Due to the rapid development of metal organic frameworks (MOFs) in energy storage and conversion in ...
A comprehensive investigation on hydrogen grabbing by SiO-GeO was carried out, including DFT computations at the CAM-B3LYP-D3/6-311+G (d,p) level of theory. The data shows that if silicon elements are replaced by germanium, the H-grabbing energy will be ameliorated. Electromagnetic and therm...
This paper presents a new technique using energy filtered TEM (EFTEM) for inelastic electron scattering contrast imaging of Germanium distribution in Si–SiGe nanostructures. Comparing electron energy loss spectra (EELS) obtained in both SiGe and Si single crystals, we found a spectrum area strongly ...
The minimum room temperature band-gap energy values for some common semiconductors are 1.12 eV for silicon [61], 0.67 eV for germanium [61] and 1.35 eV for gallium arsenide [61]. For photovoltaic devices, the band-gap energy needs to be close to the peak of the energy range of visible ...
A molecular dynamics simulation method is used to construct the displacement cascades formed in germanium and silicon by self-ions with energy in the range 50500 eV. A simple interatomic potential is presented which empirically accounts for the relative structural difference in the two targets. The ...