The energy bands of germanium, valid throughout the entire Brillouin zone, have been obtained by diagonalizing a k. p Hamiltonian referred to 15 states at k = 0. The band structure of GaAs has been calculated by adding six independent matrix elements of an antisymmetric potential V to the ...
Valence band structure of germanium 来自 Semantic Scholar 喜欢 0 阅读量: 37 作者: Fawcett,W 摘要: The absorption produced by direct inter-valence band transitions provides a sensitive test for the calculated valence band shapes. A calculation by Kane of the valence band shapes of p-type ...
The energies of the magnetic sub-bands associated with the Vand Vvalence bands in germanium have been calculated as a function of k, the propagation constant parallel to the external magnetic field. Warping of the Vand Vbands was neglected. Sub-bands belonging to the 1and 2ladders (light hole...
The small band gap requires an accurate treatment of conduction and valence band interactions while higher bands are treated by perturbation theory. A highly nonparabolic conduction band is found. The valence band is quite similar to germanium. Energy terms linear in k which cannot exist in ...
The valence band is quite similar to germanium. Energy terms linear in k which cannot exist in germanium are estimated and found to be small, though possibly of importance at liquid-helium temperature. An absolute calculation of the fundamental optical absorption is made using the cyclotron ...
ELECTRONIC band structureELECTRIC conductivityThe electronic properties of germanium monosulphide (GeS) monolayer under tensile strain were investigated using first-principles calculations. Our computations showed that the band gap of GeS monolayer was tuned from 1.96 to 2.72 eV via uniaxi...
Pollak: Energy-band structure of germanium and silicon. Phys. Rev. 142, 530–543 (1966) Article ADS Google Scholar M. Cardona: Band parameters of semiconductors with zincblende, wurtzite, and germanium structure. J. Phys. Chem. Solids 24, 1543–1555 (1963); Article ADS Google Scholar M...
These compounds all appear to have a similar valence band structure. The band, as in germanium and silicon, is degenerate at the center of the zone, there being a heavy-hole band and a light-hole band, and also a third band split off by the spin–orbit interaction. The maxima of the...
- 《Journal of Materials Research》 被引量: 73发表: 2007年 Real Structure and Thermoelectric Properties of GeTe-Rich Germanium Antimony Tellurides Quenched Ge–Sb–Te (GST) compounds exhibit strongly disordered metastable structures whose average structure corresponds to a distorted rocksalt type with....
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The direct gap property may be brought about by the alloy composition alone or combined with the influence of...