The real bands became known only in 1954 when Frank Herman used a combination of experimental information and W. Conyers Herring's Orthogonalized Plane Wave method to propose essentially correct band structures for silicon and germanium. Further understanding came with better descriptions of the effects...
Energy band structure of diamond,cubic silicon carbide, silicon, and germanium. Frank Herman,Richard L Kortum,Charles D Kuglin. International Journal of QuantumChemistry . 1967Herman, F, Kortum, RL, Kuglin, CD (1966) Energy Band Structure of Duamond, Cubic Silicon, and Germanium. International ...
F. Herman, R. L. Kortum, C. D. Kuglin, and R. A. Short, “New Studies of the Band Structure of Silicon, Germanium, and Grey Tin,”Quantum Theory of Atoms, Molecules, and the Solid State, P. P. Löwdin, ed. (Academic Press, New York, 1966), pp. 381–428 Google Scholar F....
Energy-band structure in strained silicon: A 20-band k·p and Bir–Pikus Hamiltonian model. A strain Bir-Pikus Hamiltonian H[sub st], associated with a 20-band sp³s* k·p Hamiltonian H[sub kp], is used to describe the valence band and the first... Richard,Soline,Aniel,... - ...
The strain tensor arising from uniaxial stress along an arbitrary direction on the (001) surface of Si is calculated. With these uniaxial strain tensor, the band structure of silicon material under arbitrary uniaxial stress on the (001) surface is calcul
The energy band gaps of silicon-carbon alloys are calculated using a GW approach with local density approximation (LDA) eigenfunctions. These band gaps are compared with those calculated with nonlocal corrections for the exchange-correlation energy functional. For small concentrations of carbon, it is...
et al. (2011) Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer. Mater. Sci... H Watanabe,T Kirino,Y Kagei,... - Silicon Carbide & Related Materials 被引量: 0发表: 2011年 Triangular Mott-Hubbard Insulator Phases...
The band‐structure equation is put into a simplified form that can be readily used, viz., ∑∑aEk=0, where k is the wave‐vector magnitude, Eis the energy at k, and the coefficients aare functions of band parameters and strain components. The band structure of strained silicon is ...
Heterojunctions of solid C60 and crystalline silicon: rectifying properties and energy-band models Heterojunctions of undoped solid C60 and n- or p-type-doped crystalline Si have been obtained. Current-voltage measurements show that both C60/n-Si and C60... KM Chen,YQ Jia,SX Jin,... - 《Jo...
bandgapenergyinsilicon硅的带隙能量 系统标签: silicongap带隙能量bandenergydiode AMERICANJOURNALOFUNDERGRADUATERESEARCHVOL.7,NO.1 BandGapEnergyinSilicon JeremyJ.Low,MichaelL.Kreider,DrewP.Pulsifer AndrewS.JonesandTariqH.Gilani DepartmentofPhysics MillersvilleUniversity P.O.Box1002 Millersville,Pennsylvania17551US...