The microstructure of the film,its magnetic properties and tunneling magnetoresistance effect (TMR) were systematically studied. 由Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 。 3. The history and applications of tunnelin...
Tunneling magnetoresistance effect element, magnetic memory, and built-in memoryThe present invention provides a TMR element capable of suppressing an input of an excessive current to a magnetic tunnel junction. A TMR element includes a magnetic tunnel junction, a side wall covering a side surface ...
2.The microstructure of the film,its magnetic properties andtunneling magnetoresistanceeffect (TMR) were systematically studied.由 Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 。 3.The history and applications oftunneling ma...
The microstructure of the film,its magnetic properties andtunneling magnetoresistanceeffect (TMR) were systematically studied. 由Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 。
We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value ...
Tunneling Magnetoresistance effect of granular multilayers by MgF_2/Al_2O_3 compound insulators Nakazumi M. , Ono K. , Kita E. Meeting abstracts of the Physical Society of Japan 58(1-3), 412, 2003-03-06DOI: 10.11316/jpsgaiyo.58.1.3.0_412_2 年份...
(MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by...
5.Tunnelling magnetoresistance effects of magnetic tunnel junctions磁性隧道结的隧穿磁电阻效应及其研究进展 6.Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4)共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)
This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review) 展开 关键词: General or Review/ hard discs magnesium compounds magnetic storage magnetoelectronics tunnelling tunnelling ...
A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the T... S Yuasa,T Sato,E Tamura,... - Epl 被引量: 106发表: 2000年 Thickness dependence of tunneling magneto-resistance... Investigates the magnet...