Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity are disclosed. For example, a TMR sensor may be used as a biosensor to detect the presence of biological materials. In aspects disclosed herein, free layers of ...
Magnetoresistive tunneling comprising, in the form of a stack 5 - a first layer (12) of magnetic material free magnetization, - a layer (16), called barrier of an electrically insulating material, and - a second layer (14) of magnetic material trapped magnetization, wherein the first layer...
The present invention relates generally to electronic devices. More particularly, the present invention relates to integrated circuit (IC) devices with smart power devices and magnetoresistive random access memory (MRAM) circuitry which implement magnetic tunnel junctions (MTJs) as temperature sensors or ...
By properly tuning the temperature and voltage, the p-MTJ can be used for various applications such as temperature sensors and voltage-controlled MRAMs. The physical origins of the temperature and voltage dependence of the coercivity could be dominated by the domain nucleation and domain wall propa...
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studi...
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs)1,2 is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices3,4,5. Conventional MTJs with an amorphous alumin
magnetoresistance, quantum-well resonance tunneling effect, electric field assisted magnetization switching effect, and spincaloric effect. (3) In the last section, a brief introduction of some important device applications of MgO based MTJs, such as GMR & TMR read heads and magneto-sensitive sensors...
The huge tunneling MR (TMR) of over 10001000 in the MgO-based F-MTJ is related to the perfect spin filtering effect [12,13], which is responsible for the large MR ∼100∼100 in the FeMn-based AF-MTJs [10]. When a Mn22Au film is contacted with an MgO film to form an ...
Magnetic tunnel junctions (MTJs) are well-known electronic devices, which can be applied as a magnetic field sensors1,2, read heads of hard drives3, electronic compass, automotive sensors4, etc. In particular, scanning MTJ microscope was constructed for a high-resolution imaging of remanent magne...
20050260772A METHOD OF FORMING A MAGNETIC TUNNELING JUNCTION (MTJ) MRAM DEVICE AND A TUNNELING MAGNETORESISTIVE (TMR) READ HEAD2005-11-24Horng et al.438/3 6903400Magnetoresistive memory apparatus2005-06-07Kikuchi et al.257/295 6841395Method of forming a barrier layer of a tunneling magnetoresist...