giant magnetic tunneling effectgiant magnetoresistanceelectric conductivityA giant magnetoresistance ratio of 30% at 4.2 K and 18% at 300 K was observed for the first time in an Fe/Al O /Fe junction. The conductance at room temperature was expressed well by G=96.2 (1 + 0.09 cos θ)(Ω )...
10.1038/ncomms1748 Giant spin-dependent thermoelectric effect in magnetic tunnel junctions Weiwei Lin1,†, Michel Hehn1, Laurent Chaput1, Béatrice Negulescu1,†, Stéphane Andrieu1, François Montaigne1 & Stéphane Mangin1 Thermoelectric effects in magnetic nanostructures and the so-called spin ...
aThe orbital magnetic moments carried by the Bloch electrons in the mini-Brillouin zone with no strain.bThe orbital magnetic moments of the electrons when a uniaxial strain characterized by\varepsilon =0.1 \%is introduced. The staggered potential is set to be\Delta =17 meV in both cases. ...
giant tunneling magnetoresistance effect 摘要 The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be ...
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studi...
valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively... Y Hou,F Xue,L Qiu,... - 计算材料学(英文) 被引量: 0发表: 2022年 Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Het...
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd_3As_2 of giant anisotropic magnetoresistance and its transverse version,...
spin-Seebeckeffectobservedinferromagneticmetals(10,11), semiconductors(12)andinsulators(13),thermal-spininjection fromaferromagnetintoanonmagneticmetal(14),themagneto- Seebeckeffectobservedinmagnetictunneljunctions(MTJ)(15– 17),Seebeckspintunnelinginferromagnet–oxide–silicontunnel ...
14. The memory device according to claim 1, wherein said switching element comprises a field-effect transistor comprising a source region, gate region, and drain region. 15. The memory device according to claim 1, further comprising magnetic-field concentrating layers made of a high-permeability...
A second object of this invention is to use the mask so formed to pattern a GMR stack having a CPP (current-perpendicular-to-plane) configuration, but other configurations such as a tunneling magnetoresistive (TMR) sensor or a magnetic random access memory (MRAM) can also be effectively patte...