Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetizatio...
Tunnel magnetoresistanceMagnetic sensorsVehicle detectorsVehicle detectors are useful to provide essential information such as parking occupancy and traffic flow. To create one robust vehicle detector which works not only in controlled environment (i.e. indoor), but it should also work in outdoor ...
Weikewei offers a new series of current sensors based on TMR technology, which is cost-effectiveSingle chip formAchieved industry-leading precision, bandwidth, and step response performance. High precision, broadband, TMR based current sensors can be used in various ADC and microprocessor based power...
Tunnelling magnetoresistance (TMR) is similar to GMR but has a non-magnetic insulating layer instead of a conducting one. The insulating layer is normally 1–2 nm thick, such that the electrons can tunnel through. These sensors are also known as magnetic tunnel junctions (MTJ). The materials ...
7.6.1 Ultrasensitive Magnetic Sensors The discovery of the giant magnetoresistance effect (GMR) in 1988 can be considered as the beginning of the spintronics era. This phenomenon is observed in thin (a few nanometers) alternating layers (superlattices) of ferromagnetic and nonmagnetic metals (e.g....
Up to now, remarkable applications based on flexible electronics include displays5, organic light-emitting diodes (LED)6, organic solar cells7, and various kinds of sensors8,9. Nowadays, spintronic devices based on giant magnetoresistance (GMR) and magnetic tunnel junctions (MTJs) are widely used...
Magnetic sensorsLow-frequency noiseMagnetic 1/fnoiseElectronic 1/fnoiseIn this study, nanoscale MgO magnetic tunnel junctions (MTJs) with an orthogonal magnetization structure between the free and pinned layers and various junction sizes were fabricated, and their tunnel magnetoresistance (TMR) ratio, ...
Various embodiments of the present invention are directed to new Tunnel Magnetoresistance (TMR) systems, also known as magnetic tunnel junction (MTJ) systems. Other embodiments include methods of fabrication of such systems. The systems disclosed herein tend to exhibit at least one of an improved TM...
Meanwhile, the TMR (Tunnel MagnetoResistance) device is expected to provide highly sensitive and highly accurate electronic devices, because the MR ratio (Magnetic Resistance change ratio) of the TMR device is far larger than that of the GMR device. ...
Moodera et al., “Large Magnetoresistance At Room Temperature In Ferromagnetic Thin Film Tunnel Junctions”, Phsical Review Letters vol. 74, No. 16, Apr. 17, 1995, pp. 3273-3276. Parkin et al., “Exchange-Biased Magnetic Tunnel Junctions And Application To Nonvolatile Magnetic Random Access...