Tunnel magnetoresistanceMagnetic sensorsVehicle detectorsVehicle detectors are useful to provide essential information such as parking occupancy and traffic flow. To create one robust vehicle detector which works not only in controlled environment (i.e. indoor), but it should also work in outdoor ...
Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is ...
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs)1,2is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices3,4,5. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been exten...
2024The superconducting/tunnel magnetoresistance (TMR) composite magnetic sensor is expected to have great application prospects in the field of weak magne... Y Hu,J Tao,M Pan,... - 《Sensors & Actuators A Physical》 被引量: 0发表: 2024年 Ferromagnetic tunnel junction, magnetoresistance effect...
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studi...
PROBLEM TO BE SOLVED: To provide a perpendicular magnetization film structure having low saturation magnetization and flatness, and also to provide a perpendicular tunnel magnetoresistance element using the perpendicular magnetization fi... 介川 裕章,リワチョル,宝野 和博,... 被引量: 0发表: 2020...
TMR sensors replace SV sensors in the near future as the demand for ultra-high density is ever growing, an application to the field of the magnetic heads has just started, and one of the outstanding objects is to develop a new head structure, which can maximize the TMR properties. Great ...
METHOD OF FORMING TUNNEL MAGNETORESISTANCE (TMR) ELEMENTS AND TMR SENSOR ELEMENTA method includes performing an ion beam etching process on a tunnel magnetoresistance (TMR) stack to remove material portions of a first magnetic layer and a... I Mark,R Klaus,M Hartmut,... 被引量: 0发表: 2019...
Tunneling magnetoresistance as a function of the applied voltage is strongly modified atn = 2, Fig.2c. The gradual TMR variations show initially suppressed TMR at low voltages (curve 1) and then dome-like behavior (curve 4) depending on the size distribution. Figure2frepresents the competit...
Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), m... S.,G.,Wang,... - 《J Nanosci Nanotechnol》 被引量: 32发表: 2012年 Tunnel magnetoresistance in textured Co2FeAl/MgO/CoFe magnetic tu...