RESONANT TUNNELING FET AND FABRICATION THEREOFPURPOSE: To provide a small resonant tunneling element which can be combined with existing technologies.SAIIDO ENU TERANIサイードエヌテラニHAABAATO GORONKINハーバートゴロンキンJIYUN SHIENジュンシェン...
A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the dev... Y Wu,H Hasegawa,K Kakushima,... - 《Microelectronics Reliability》 被引量: 10发表: 2014年 New structure of tunneling carbon nanotube...
In this paper, asymmetric gate structure and pocket source are proposed into the double-gate tunneling FET (DG TFET). Steeper average subthreshold swing (SS) and larger on currents are observed in the proposed TFET as compared with conventional TFET. The improvements are attributed to a larger ...
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD 来自 IOP 喜欢 0 阅读量: 124 作者:A Nabil,A Shaker,M Abouelatta,H Ragai,C Gontrand 摘要: In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The ...
In order to suppress the ambipolar current of a junctionless tunneling field effect transistor (JLTFET), this study focuses on the effect of the gate metal on the drain semiconductor, which was modeled as a capacitor by the analytical survey. The capacitance behavior and, consequently, the ...
A memory using tunneling FETs is provided to increase memory storage density by sharing a source region coupled by adjacent memory cells, so that word lines between the adjacent memory cells are positioned closely in order to reduce a size of cell. A first tunneling FET includes a first drain...
Tunnel FET- a general overview Sub-threshold physics of FET devices The steepness of transition from off-state to on-state in any field effect transistor device can be assessed using the sub-threshold swing (SS) i.e. the minimum applied gate bias required to increase the sub-threshold current...
Graphene tunneling FET and its applications in low-power circuit design Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high I_on/... X Yang,J Chauhan,J Guo,... - Symposium on Great Lakes Sympos...
Band-to-Band Tunneling Ballistic Nanowire FET:C i r f f f ^ o m p a t i b l e Device Modeling and Design of Ultra-Low-Power Digital Circuits and Memories Low-Power Digital VLSI Design: Circuits and Systems addresses both process technologies and device modeling. Power dissipation in CMO...
Graphene tunneling FET and its applications in low-power circuit design Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high I_on/... X Yang,J Chauhan,J Guo,... - Symposium on Great Lakes Sympos...