A compact interband tunneling current model for Gate-on-Source/Channel SOI-TFETsdoi:10.1007/s10825-018-1236-3SOI-FETInterbandtunnelingAnalyticalmodelingBackgateA tunneling probability-based drain current model for tunnel field-effect transistors (FETs) is presented. First, an analytical model for the...
A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMD... C Usha,P...
We present a model for the tunneling field-effect transistor (TFET) comprising a series connection of a metal-oxide-semiconductor FET (MOSFET) with a gate-... J Wan,CL Royer,A Zaslavsky,... - 《Journal of Applied Physics》 被引量: 50发表: 2011年 Analytical model for dc characteristics ...
The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to a...
Alternatively, BC can be applied to the junction FET structure13. The buried channel junction FET uses a floating diffusion node as the gate. Since the gate is located underneath the channel, the interface traps have less impact on the conduction carriers, resulting in lower 1/f noise. ...
2032Accesses 3Citations Metrics Abstract The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines ...
The proposed model is validated in the DC, AC, small-signal and large-signal... Sun,Lingling,Lü,... - 《Journal of Semiconductors》 被引量: 3发表: 2010年 Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation The role of hot-carrier-induced interface states in NMOSFETs...
nTFET or 15 mV/dec in pTFET. The simulation involves the NEGF quantum transport method and the sp3s*d5_SO tight-binding band structure model implemented in an OMEN simulator. It is to be understood that, in accordance with an embodiment of the present invention, further increase of IONcan...
The operational limit of nanoscale transistors motivates the exploration of post-CMOS devices like Tunnel FET (TFET), having steeper SS and immunity toward short channel effects. Thus the field of nanoscale 2D-TFET has gained compelling attention in recent times. The nanoscale TFET, with two-...
X. GuH.WangG. GildenblatG. WorkmanS. VeeraraghavanS. ShapiraK. StilesDepartment of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USANanotechnology Conference and Trade ShowB. Gu et al., "A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling ...