This paper presents a compact two-dimensional analytical device model of surface potential, in addition to electric field of triple-material double-gate(TMDG) tunnel FET. The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary ...
The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to a...
The operational limit of nanoscale transistors motivates the exploration of post-CMOS devices like Tunnel FET (TFET), having steeper SS and immunity toward short channel effects. Thus the field of nanoscale 2D-TFET has gained compelling attention in recent times. The nanoscale TFET, with two-...
Resonant tunneling gate field effect transistors (RT-FET) have also been developed (Capasso et al., 1987b, 1987c; Sen et al., 1987c). In addition, the integration of RT diodes and FETs (Bonnefoi et al., 1985a; Woodward et al., 1987a, 1987b) and their circuit applications (Woodward...
3, for example, by connecting a conventional FET with two RTDs in series, one forms a static random access memory (SRAM) structure. The illustrated tunnel diode SRAM has two stable operating points 300, 300′ that may be used to represent “0” and “1” in memory operation. This device...
In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of st...
surfacepotentiallateralandverticalelectricfieldThis paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the ...
The geometry dependences of the double-gate and nanowire TFETs characteristics are reproduced by the compact model. The diffusive transport in TFETs is modeled by the proposed drain-FET method and source-resistance method. TFETs with the uniaxial strain engineering are also accounted for by ...
A compact interband tunneling current model for Gate-on-Source/Channel SOI-TFETsdoi:10.1007/s10825-018-1236-3SOI-FETInterbandtunnelingAnalyticalmodelingBackgateA tunneling probability-based drain current model for tunnel field-effect transistors (FETs) is presented. First, an analytical model for the...
X. GuH.WangG. GildenblatG. WorkmanS. VeeraraghavanS. ShapiraK. StilesDepartment of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USANanotechnology Conference and Trade ShowB. Gu et al., "A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling ...