In section Tunnel FET–A General Overview, a general understanding of TFETs is developed, emphasizing the underlying physics and working principle of the device. Subsequently, the relevant design parameters of TFET are identified and correlated with 2D material systems. Section 2D Materials for Tunnel...
www.nature.com/scientificreports OPEN Robust ultrasensitive tunneling- FET biosensor for point-of-care diagnostics received: 05 November 2015 accepted: 16 February 2016 Published: 02 March 2016 Anran Gao, Na Lu,Yuelin Wang & Tie Li For point-of-care (POC) applications, robust, ...
The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to ...
The BC effect can be amplified by using fin sidewalls as potential barriers in FinFET structure11. Furthermore, BCSFs with multi-gate can be designed to achieve low 1/f noise while maintaining small gate areas12. These structures generally have a trade-off that gate control becomes more ...
The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to ...
Furthermore, the semiconductor industry has proposed the tunneling FET (Field Effect Transistor) blueprint for a future sub-2-nm node using quantum-mechanical band-to-band tunneling by ultrathin semiconducting films or nanowires.3, 57 As the linewidth will be very close to the radius of a sing...
The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study As the fabrication of short-channel MoS2-FET has made significant progress, there is a growing need to understand the factors affecting the transfer charac... A Rawat,B Rawat - 《IEEE Transacti...
Tunnel FET Based SRAM Cells – A Comparative Review This paper reviews some of the recent developments in Tunnel FET based SRAM cells. Tunnel Field Effect Transistor (TFET) is a potential contender to outper... R Gadarapulla,S Sriadibhatla - Springer, Singapore 被引量: 0发表: 2021年 加载...
Controlling the quantum ground state of a system is essential for applications. The best-known example is semiconductor technology, where the state (conductive or not conductive) of a semiconductor is driven by the so-called field-effect transistor (FET). In the FET, the number of electric char...
2053Accesses Metrics Abstract The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabli...