The critical issues, technical challenges and viable technologies of tunneling FETs (TFET) using a variety of semiconductors such as III-V, Ge, Si and oxide semiconductor are addressed. Device engineering indispensable in improving the performance of TFETs is summarized with emphasis on the source/...
emphasizing the underlying physics and working principle of the device. Subsequently, the relevant design parameters of TFET are identified and correlated with 2D material systems. Section 2D Materials for Tunnel Fet Design discusses the material properties of the individual 2D semiconductor material ...
A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the dev... Y Wu,H Hasegawa,K Kakushima,... ...
7.The TFET of claim 4, wherein the TFET is a finfet, trigate or square nanowire-based device. 8.A tunneling field effect transistor (TFET), comprising:a homojunction active region disposed above a substrate, the homojunction active region comprising:a relaxed GeSn body having an undoped chann...
In this paper, asymmetric gate structure and pocket source are proposed into the double-gate tunneling FET (DG TFET). Steeper average subthreshold swing (SS) and larger on currents are observed in the proposed TFET as compared with conventional TFET. The improvements are attributed to a larger ...
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD 来自 IOP 喜欢 0 阅读量: 124 作者:A Nabil,A Shaker,M Abouelatta,H Ragai,C Gontrand 摘要: In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented. The ...
For example, a tunneling field effect transistor (TFET) includes a homojunction active region formed above a substrate. The homojunction active region includes a doped source region, an undoped channel region, a wrapped-around region, and a doped drain region. A gate electrode and gate dielectric...
Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistorsTunnel FET (TFET)Staggered heterojunctionBand-to-band tunneling (BTBT)Intrinsic gainTransconductance-to-drive current ratioCutoff frequency f_T...
(the bandgap of InSb is ~0.17 eV). In Fig.1a, we show an image of a similarly fabricated sub-10 nm back-gated GNR-FET, but now with two additional side gates to enable the Esaki diode formation, and realization of a GNRTFET. The entire graphene region, the long GNR channel,...
The operation mechanism was thoroughly investigated in comparison with a typical tunneling field-effect transistor (TFET). The noise reduction was analyzed based on BC shape, and electric field. It was also quantitatively compared with conventional SF (CSF) and BCSF. Then, the Av is subdivided ...