Quantum mechanical tunneling of electrical conduction in a thin insulating film (SiO2) from the strongly inverted Si surface has been studied. A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a ...
Whereas in p-channel MOSFETs, uniaxial tensile stress increases the hole tunneling current by decreasing the hole population in the top band with has a higher out-of-plane mass. 展开 关键词: Charge carrier processes Compressive stress Current measurement Electrons Leakage current MOSFET circuits ...
An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with
1.Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region多晶硅薄膜晶体管泄漏区带间隧穿电流的建模 2.Research on Tunneling Current Noise Characterization and Measurement Methods in MOSFETsMOSFET隧穿漏电流噪声特性及测试方法研究 3.Tunneling process is important in the low to...
K yw S:MOSFET sG uantumeffectsGgatetunnelingcurrentGdevicemodeling PA :7340GG0356G7340 A :0253-4177(2002)04-0419-05 ChenLifeng male, asbornin1976.~eisengagedinresearchonmodelingongatetunnelingcurentindeepsub-micronMOSdevices. MaYutao male, asbornin1974.~isresearchinterestsfocusondevicesimulation...
MOSFETSchrodinger equationsemiconductor device modelssilicontunnellingWKB calculations/ gate leakage currentFor the first time, the tunneling current in silicon nMOS structures with ultra-thin gate oxides has been studied both by numerically solving Schrdinger's equation and by using the WKB approximation,...
Static characterizations of various layouts and geometries demonstrate that narrow pMOSFET and H-gate design provides the highest Ion gain due to higher body potential. Furthermore, it has been found that the largest n+ poly-gate area results in the fastest switch-on drain current transients....
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's 来自 国家科技图书文献中心 喜欢 0 阅读量: 149 作者:SH Lo,DA Buchanan,Y Taur,W Wang 摘要: Not Available 关键词: MOSFET capacitance dielectric thin films inversion layers leakage ...
3. Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs [J] . Leland Chang, Yang K.J., Yee-Chia Yeo, IEEE Transactions on Electron Devices . 2002,第12期 机译:双栅极和超薄体MOSFET中的直接隧道栅极泄漏电流 4. Atomic-layer-deposited ultrathin Si-nitride gate ...