Quantum mechanical tunneling of electrical conduction in a thin insulating film (SiO2) from the strongly inverted Si surface has been studied. A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a ...
When the stress electric field is higher than the threshold electric field, the traps play a role of electronic trap; whereas the traps play a role of hole trap. 展开 关键词: Fowler-Nordheim隧道效应;MOSFET;场效应晶体管;金属氧化物半导体;集成电路 年份: 2003 ...
超深亚微米n沟道Si-MOSFET中栅介质的击穿 通过改变Si-MOSFET的 栅电压,源电压,漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率,沟道内电流密度,电场,雪崩产生密度以及隧穿电流的变化,得出当源,漏... 李青龙 - 《常州工学院学报》 被引量: 5发表: 2005年 考虑量子力学效应的超薄栅氧nMOSFET's直...
考虑量子力学效应的超薄栅氧nMOSFET´s直接隧穿电流二维模型 Modeling on 2-D Direct Tunneling Current in Ultra-Thin Oxide nMOSFET´s Considering Quantum Mechanics 文档格式: .pdf 文档大小: 169.71K 文档页数: 5页 顶/踩数: 0/0 收藏人数: ...
RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal... Sun,Lingling,Lü,... - 《Journal of Semiconductors》 被...
1.Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region多晶硅薄膜晶体管泄漏区带间隧穿电流的建模 2.Research on Tunneling Current Noise Characterization and Measurement Methods in MOSFETsMOSFET隧穿漏电流噪声特性及测试方法研究 3.Tunneling process is important in the low to...
An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with
The gate direct tunneling current in ultra-thin oxide is computed with different device parameters. 采用自洽解方法求解一维薛定谔方程和二维泊松方程,得到电子的量子化能级和相应的浓度分布,利用MWKB方法计算电子隧穿几率,从而得到不同栅偏置下超薄栅介质MOSFET的直接隧穿电流模型。 更多例句>> 4) tunnelling ...
This work examines different components of leakage current in scaled n-MOSFET's with ultrathin gate oxides (1.4-2.0 nm). Both gate direct tunneling and dra... N Yang,WK Henson,Jimmie J. Wortman - 《IEEE Transactions on Electron Devices》 被引量: 324发表: 2002年 Real-space observation of...
In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS) with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdown voltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impact ioniz...