Takeda, E.; Matsuoka, H.; Igura, Y.; and Asai, S., "A band to band tunneling MOS device (B2TMOSFET," in IEDM Tech. Dig., 1988, pp. 402-405.E. Takeda,H. Matsuoka, et al.A band to band tunneling MOS device (B2T-MOSFET)---A kind of "Si Quant μ m Device"---....
FIG. 1. SEM of a band-to-band tunneling device. The sche- matic in the bottom portion of the figure shows the vertical arrangement of gates, contacts, and the nanotube. VOLUME 93, NUMBER 19 P HYS I CA L R E VI E W L E T T E RS week ending 5 NOVEMBER 2004 196805-2 196805...
Threshold voltage (with and without body bias) for heterostructure pMOSFET is analytically explored as a function of applied bias for Si-SixGe1-x material system in presence of band-to-band tunneling. Threshold voltage for given device structure is calculated in the light of body effect for diff...
Salahuddin, "Analysis of InAs vertical and lateralband-to-band tunnelingtransistors: leveraging vertical tunneling for improved performance," Applied Physics Letters, vol. High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application ...
A band to band tunneling MOS device (B2T-MOSFET)-a kind of 'Si quantum device' A band-to-band tunneling MOS device (B/sup 2/T-MOSFET), which consists of both n/sup +/ source (drain) and p/sup +/ drain (source) is proposed and characterized experimentally in detail. The band-to...
Band -to -band tunneling transistor scaling and design for low-power logic applications As MOSFET gate lengths are scaled below 45nm, fundamental physical limitations are for the first time presenting barriers to further scaling. Among the mos... R Woo - Dissertations & Theses - Gradworks 被引量...
Double Gate MOSFETPotentialGate to Channel Leakage CurrentThis paper present, analytical modeling and estimation of band to band tunneling current of metal gate (Hf/AlNx) symmetric double gate MOSFETwith intrinsic silicon channel. To model this leakage current, we use the center and 2D analytical ...
The drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT. Each of the three shows different dependencies on back-gate bias. As a result, the bulk...
Accurate estimation of total leakage in nanometer-scale bulk CMOS circuits based on device geometry and doping profile Dramatic increase of subthreshold, gate and reverse biased junction band-to-band-tunneling (BTBT) leakage in scaled devices results in the drastic increase... S Mukhopadhyay,A Raych...
Structural effect on band-trap-band tunneling induced drain leakage in n-MOSFET's The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and character... T Wang,TE Chang - 《IEEE Electron Device Letters》 被...