The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias ( V BG)鈥揹rain current ( I D) characteristics to V BG axis. The flat-band voltage decreased linearly with the number of implanted ions. The ...
In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFE...
The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more ...
High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO...
Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region This paper proposes an analytical model for an asymmetric double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) with varying gate-oxide... HS...
Gyung-Su Park1, Jai Kwang Shin1, Dongjin Lee3, Jieun Lee3, Kyoungho Jung3, Moonyoung Jeong3, Satoru Yamada3, Hee Jae Kang4 & Byoung-Deog Choi2 We demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/(LaO or ZrO)/SiO2 stack structu...
A new form of photo-voltage is studied, which is due to charge accumulation on surface states from photo-injected carriers. In many cases this voltage may be of considerable magnitude and under definite conditions (at low temperatures, for instance) substantially exceed the ordinary barrier bipolar...
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Figure 8. Interfacing the ADTR1107 frond-end IC to the ADAR1000 X-band and Ku-band beamformer. The ADAR1000 provides all of the required gate bias voltages and control signals, resulting in a seamless interface to the front-end IC. While the ADTR1107 LNA gate voltage is self-...
A method for extracting flat-band voltage and threshold voltage of an MOSFET (metal-oxide-semiconductor field effect transistor) based on current generation of a grid-control drain electrode belongs to the filed of micro electronic technique, is used for extracting VFB and VTH through the variation...