voltage n.[U,C]电压;伏特数 in band 【计】 同频带信号传输 band(bont) 窑箍 no voltage 零电压,无电压 flat chest n. 平胸 flat bodied 体侧平直的 flat cut 弦切 flat die 平钢模,平砧 最新单词 kuala lumpur的中文意思 n.吉隆坡(马来西亚首都) kraft paper是什么意思 n. 牛皮纸 ...
电压与平带电压(flat-band voltage)分布,结果如图4所示。综合图3与图4之结果,可得知当Vbase为0.5 V时,电荷帮浦电流之增 … www.pdfio.com|基于26个网页 2. 平带电位 2-3-3平带电位(flat-band voltage)7 2-3-4半导体电极的光效应8二、多孔矽形成机制92-4 矽在氢氟酸电解液中的电流—电压(… ...
平带电位（Flat band voltage）就是在MOS系统中，使半导体表面能带拉平（呈平带状态）所需要外加的电压时的电位。用来表征：平带状态一般是指理想MOS系统中各个区域的能带都是拉平的一种状态。测量：电化学方法：在三电极体系下，使用入射光激发半导体电极，并改变电极上的电势。当施加的电位比平带电位偏负...
Theflat-band voltagewas measured by the conventional MOS capacitance method. 用C V技术测量其MOS结构平带电压,结果表明平带电压随氧等离子体处理时间、反应室气压和射频功率等条件的改变而变化。 更多例句>> 2) Flat band voltage 平带电压 1. The drifts of flat band voltage and threshold voltage in circuit...
2.Theflat-band voltagewas measured by the conventional MOS capacitance method.用C V技术测量其MOS结构平带电压,结果表明平带电压随氧等离子体处理时间、反应室气压和射频功率等条件的改变而变化。 英文短句/例句 1.The Flat-band Voltage of Poly-SiO_2/Si Structure Affected by Electron Irradiation;电子束辐照...
We have investigated the flat-band voltage (VFB) shifts of tantalum nitride gate MOS capacitors prepared by two methods. One is CVD-tantalum nitride (CVD-TaN) deposited by the chemical vapor deposition technique using Ta[NC(CH3)2C2H5][N(CH3)2]3as a precursor, and the other one is ...
FLAT-BAND VOLTAGE REFERENCE Abstract of the Disclosure A flat-band voltage reference includes two insulated- gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal...
The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias ( V BG)–drain current ( I D) characteristics to V BG axis. The flat-band voltage decreased linearly with the number of implanted ions. The ...
flat band method 平板法 flat band voltage 平带电压 flat band capacitance 【电】 平能带电容 semi flat band method 半带法 flat staggered amplifier wide band amplifier 宽频带放大器 in the flat 在纸上,在平面图上 on the flat 在纸上,在平面图上;在平地上 flat in 横插进去 相似...
专利名称：Flat-band voltage reference 发明人：Morley C. Tobey, Jr.,David J. Giuliani,Peter B.Ashkin 申请号：US05/587188 申请日：19750616 公开号：US03975648A 公开日：19760817 专利内容由知识产权出版社提供 摘要：A flat-band voltage reference includes two insulated-gate field-effect transistors, ...