3) transient enhanced diffusion 瞬间增强扩散 1. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. 结果表明 ,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散 。 2. The ...
We have investigated the location of the defects causing the transient-enhanced diffusion (TED) of boron implanted at very low energies in Si. The localization was done by removing the surface layer of the silicon implanted with boron (1 and 0.5 keV, 1x10[sup 14]/cm[sup -2]) by ...
Twitter Google Share on Facebook TED (redirected fromTransient Enhanced Diffusion) Category filter: AcronymDefinition TEDTechnology, Education, Design TEDTechnology Education TEDText Editor TEDTeacher Education Department(various universities) TEDTenders Electronic Daily(European Union Journal) ...
These results suggest that the defects generated by the plasma etching procedure in the near surface region, represent an efficient sink against the flow of interstitials which cause the transient enhanced diffusion. A slow release of interstitials from this trapping immobile background occurs with ...
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices Wang. Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices. IEEE Trans... ...
Wang. Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices. IEEE Trans. Electron De- vices, 49(1):67, 2002.Howard Chih-Hao Wang, Chih-Chiang Wang, Carlos H. Diaz, Boon-Khim Liew, Jack Yuan-chen Sun, ...
First-Principles-Based Predictive Simulations of B Diffusion and Activation in Si This methodology can be used to investigate the effects of implantation energy, annealing temperature, and rapid thermal annealing ramp rate on the dopant behavior.S. TheissT. LenoskyB. Sadigh S Theiss,T Lenosky,B ...
Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant[A].Minneapolis,MN,USA 1997.Md. R. Hashim, R. F. Lever, and P. Ashburn, "2D simulation of tran- sient enhanced boron out-diffusion from the base of a SiGe...
1) transient enhanced diffusion 瞬间增强扩散 1. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. 结果表明 ,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散。 2. The tra...
Transient Enhanced Diffusion - ScienceDirectC. RaffertyEncyclopedia of Materials: Science and Technology (Second Edition)