硼的瞬间增强扩散(transient enhanced diffusion, TED)导致MOS晶体管出现反短沟道效应,阈值电压异常升高,严重影响器件性能和良品率,不同的器件尺寸,阈值电压增量不同,为探究沟道内杂质离子分布情况和器件尺寸对TED效应的影响,在40 nm CMOS工艺平台下,对调阈值注入,低掺杂漏极(LDD)离子注入和碳离子协同注入工艺进行参数...
Transient enhanced diffusion (TED) is a well-known problem in trying to form very shallow junctions by ion implantation. TED is caused by point defects that result from the damage caused when an i...
SiGe condensation, Ge interdiffusion, Boron transient enhanced diffusion TED in eSiGe, Layout dependent effect, 视频播放量 504、弹幕量 0、点赞数 11、投硬币枚数 8、收藏人数 21、转发人数 8, 视频作者 王不老說半导, 作者简介 ,相关视频:FDSOI魔鬼制程挑戰之三_
Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Prior work has concentrated on TED resulting from sub 200 KeV implants. However, the results applicable to the low energy regime cannot be extrapolated per se into the high energy...
The chapter presents a discussion on strain, growth, and transient-enhanced diffusion (TED) in SiGeC layers. Understanding and suppression of the transient enhanced diffusion (TED) are important for both CMOS and BiCMOS technologies. Reverse short channel effect, emitter push effect, and difficulty ...
A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of...
The work investigates simple transient enhanced diffusion (TED) behavior, which is a reflection of the interstitial behavior in the system. The analysis shows that TED depends mainly on two factors: the intial demage profiles and the DICIproduct. We find that, based on these two inputs, the ...
A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of...
Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5×10 13 cm 3, 100 keV) through a chemical vapor deposition (CVD) Si 3N 4 ...
There is then avoided the customary high temperature rapid thermal annealing (RTA) step and instead employed a thermal annealing for 2 hours at 750 degrees centigrade, whereupon the implanted indium atom undergo transient enhanced diffusion (TED) to form a graded junction profile, resulting in ...