Simpson T W,Mitchell L V.Transient enhanced diffusion of boron in silicon: the interstitial flux.Applied Physics Letters. 2005Transient enhanced diffusion of boron in silicon: the interstitial flux. Simpson T W,Mitchell L V. Applied Physics Letters . 2005...
Ashburn, "2D simulation of tran- sient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant," Solid State Electron., vol. 43, pp. 131-140, 1999.Hashim, Md. R.; Lever, R.F. & Ashburn, P. 2-D simulation of the effects of transient enhanced ...
A method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed ...
Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si + or Ge + implantation Si wafers were preamorphized by eitherSi+orGe+ions at temperatures between 5 and 40°C. The diffusion of low energy (4 keV)B+implants into the preamorph...
P. Kavaliova, Simulation of ion-implanted boron redistribution under different conditions of the transient enhanced diffusion suppression, in: V.M. Anischik et al. (Eds.) Proceedings of the 9-th International Conference " Interaction of Radiation with Solids": September 20-22 2011, Publication ...
Segregation to grain boundaries affects their cohesion, corrosion, and embrittlement and plays a critical role in heterogeneous nucleation. In order to quantitatively study segregation and low-dimensional phase separation at grain boundaries, here, we ap
5c). The simple approach of the FJH method enables enhanced production yields through the straightforward scaling of the quartz tube. Additionally, the effective dispersion of turbostratic graphene in both water and organic solvents facilitates effortless exfoliation. Consequently, this method presents a ...
We have investigated the location of the defects causing the transient-enhanced diffusion (TED) of boron implanted at very low energies in Si. The localization was done by removing the surface layer of the silicon implanted with boron (1 and 0.5 keV, 1x10[sup 14]/cm[sup -2]) by ...
The model embodies the usual mechanism of Si self-interstitial diffusion and B kick-out and also includes the formation of immobile precursors of B clusters prior to the onset of transient enhanced diffusion. These immobile complexes, such as BI2(a B atom with two Si self-interstitials) form ...
Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times ...