3) transient enhanced diffusion 瞬间增强扩散 1. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. 结果表明 ,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散 。 2. The ...
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The transient enhanced diffusion of B, usually observed in samples which receive such implants over characteristic time scales, is strongly retarded in these plasma etched samples upon annealing at 800, 900, or 1000 °C, as measured by secondary ions mass spectrometry. These results suggest that ...
Ion implantation technology for junction formation is limited in part by transient enhanced diffusion TED of dopants during postimplant rapid thermal annealing RTA, often leading to significant spreading of the original dopant profile. Several years ago there appeared experimental evidence that in-creasing...
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices Wang. Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices. IEEE Trans... ...
1) transient enhanced diffusion 瞬间增强扩散 1. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. 结果表明 ,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散。 2. The tra...