不过你说的 sub-bandgap absorption目测像是指能量小于带隙的吸收，和子能带看似没有关系。。。
bandgap是带隙，一般就是价带最高点到导带最低点的距离（能量）。sub-bandgap 子带隙
Casalino, M. Near-Infrared Sub-Bandgap All-Silicon Photo- detectors: A Review. Int. J. Optics Appl. 2012, 2, 1-16.Casalino, M., Coppola, G., Iodice, M., Rendina, I. & Sirleto, L. Near-infrared sub-band gap all-silicon photodetectors: state of the art and perspectives. Sensors ...
网络次能间隙 网络释义 1. 次能间隙 为达此目的,矽薄膜的次能间隙(sub-bandgap)的缺陷必需要低,有良好的抗Staebler-Wronski光劣化效应稳定度,同时有足够 … www.osec.org.tw|基于 1 个网页
51, 735 (1972)).doi:10.48550/arXiv.1309.4675W-D. ZhangE. R. BrownEprint Arxiv
Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectorsJonas Kublitski, Axel Fischer, Shen Xing, Lukasz Baisinger, Eva Bittrich, Donato Spoltore, Johannes Benduhn, Koen Vandewal & Karl Leo Nature Communications volume 12, ...
Sub-bandgapphotocurrentresponseandcarriertranspo rtpropertiesof undopedsemi·insulatingLECGaAsasacompo site YANGRuixian ,ZHAOZhengping,LOUJianzhong,LVMiao,YANGYongjun∞,cmdUULl,l∞ 1)HebeiUniversityofTechnology,Thnjm300130,China 2)HebeiSemiconductorResearchInstitute,Shijiazhuang050051,China (Received2002-08一l5、...
TLV712xx www.ti.com SBVS150A – SEPTEMBER 2010 – REVISED JANUARY 2011 300-mA, Sub-Bandgap Output Voltage, Low-IQ, Low-Dropout Regulator FEATURES 1 •234 2% Accuracy • Low IQ: 35 mA • Fixed-Output Voltage Combinations Possible from 0.7 V to 1.15 V(1) • High PSRR: 68 dB ...
Surface dominant photoresponse of multiferroic BiFeO3 nanowires under sub-bandgap illumination NanotechnologyKovur Prashanthi, Ravi Gaikwad and Thomas Thundat
The intensity of the sub-bandgap band in as-grown samples of CdTe layers is ∼3.5 weaker as compared with the annealed samples, indicating the presence of a high defect concentration, which create non-recombination centres. More over, after annealing the band-to-band emission at 1.58 eV ...