网络次能间隙 网络释义 1. 次能间隙 为达此目的,矽薄膜的次能间隙(sub-bandgap)的缺陷必需要低,有良好的抗Staebler-Wronski光劣化效应稳定度,同时有足够 … www.osec.org.tw|基于 1 个网页
bandgap是带隙，一般就是价带最高点到导带最低点的距离（能量）。sub-bandgap 子带隙
不过你说的 sub-bandgap absorption目测像是指能量小于带隙的吸收，和子能带看似没有关系。。。
The sub-bandgap photocurrent response and the carrier transport properties for this kind of composite are quite different from those for homogeneous NDSILEC GaAs.doi:CNKI:SUN:XYJS.0.2003-03-005YANG RuixiaHebei University of TechnologyZHAO ZhengpingLOU JianzhongLV MiaoYANG YongjunLIU LihaoCNKI稀有金属:...
In the dark, charges are thermally activated over the bandgap of the system, which in a D-A heterojunction corresponds to energy of CT states. In an ideal diode, this current corresponds to the saturation current, J046. In PM-OPDs, charge carriers forming J0 accumulate in the same way ...
51, 735 (1972)).doi:10.48550/arXiv.1309.4675W-D. ZhangE. R. BrownEprint Arxiv
Casalino, M. Near-Infrared Sub-Bandgap All-Silicon Photo- detectors: A Review. Int. J. Optics Appl. 2012, 2, 1-16.Casalino, M., Coppola, G., Iodice, M., Rendina, I. & Sirleto, L. Near-infrared sub-band gap all-silicon photodetectors: state of the art and perspectives. Sensors ...
The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage....
The negligible response below the bandgap also confirmed low sub-gap states in the ZnTe single crystal. In comparison, the PLM processed ZnTe:O diode exhibits a distinguished band of spectral response centered at 1.8 eV, which exactly has the same spectral overlapping with the enhanced ...
near-infrared sub-bandgap all-silicon photodetectors state of the art and perspectives近红外sub-bandgap all-silicon光电探测器的艺术和观点.pdf 30页VIP内容提供方:118zhuanqian 大小:761.49 KB 字数:约10.18万字 发布时间:2017-09-11发布于上海 浏览人气:8 下载次数:仅上传者可见 收藏次数:0 需要...