One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.Gyuweon HwangDonghun KimJose M. Cordero...
Band-gap states in nominally undoped CVD diamond films have been studied using sub-band-gap illumination with photon energy ranging from 2.4 to 3.53 eV. It was found that, with the grain size increased from 0.5 to 40 渭m, the sub-band-gap photoconductivity measured under the constant ...
In the dark, charges are thermally activated over the bandgap of the system, which in a D-A heterojunction corresponds to energy of CT states. In an ideal diode, this current corresponds to the saturation current, J046. In PM-OPDs, charge carriers forming J0 accumulate in the same way ...
The Tauc edge supports that the density of states at the bottom of conduction band is proportional to the square root of energy. The Urbach edge is attributed to interband transition caused by smooth microscopic internal fields. The square root of mean-squared internal fields, whose distribution ...
The mode density is calculated as the local density of states integrated over all states above the bandgap in the propagation constant spectrum (shown in Fig. 3e). Experimental set-up and methods In our experiments, we establish the desired photonic lattices (either the 1D ‘twisted’ and ...
The hybridization of O 2p and Sn 5s orbitals of SnO introduces mid-gap states in the bandgap of SnO_2, enabling hole transport property for SnO_(2-x) when x is > 0.2. Increasing the percentage of SnO in SnO_(2-x) ... Z Ni,Z Yu,J Huang - 《Applied Physics Letters》 被引量:...
near-infrared sub-bandgap all-silicon photodetectors state of the art and perspectives近红外sub-bandgap all-silicon光电探测器的艺术和观点.pdf 30页VIP内容提供方:118zhuanqian 大小:761.49 KB 字数:约10.18万字 发布时间:2017-09-11发布于上海 浏览人气:8 下载次数:仅上传者可见 收藏次数:0 需要...
EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals[J] . K. Germanova,Ch. Hardalov.Applied Physics A Solids and Surfaces . 1987 (2)K. Germanova,C. H. Hardalov.EL2 Deep Level in Sub-bandgap Surface Photovoltage Spectra in GaAs Bulk Crystals. Applied Physics ...
Optical excitation with a sub-bandgap optical power (E ph = 0.95 eV < Eg,Si = 1.12 eV) is applied over the MOSFETs and the gate-induced drain leakage (GIDL) current, named the optically-induced GIDL, and the energy distribution of interface states in the gate-to-drain overlapped region ...
With the effective mass mismatch and increasing QD size, the number of IB states increases, leading to higher interband photocurrent densities. The increase in the sub-bandgap photocurrent can be achieved by increasing in-plane QD density, increasing the number of QD layers, or using light-...