Wavelength-dependent surface photovoltage (SPV) measurements reveal that multiple sub-bandgap states exist in BAPbBr. As the edge height increases, the SPV amplitude at the edges reduces slightly more as compared to the adjacent regions, known as terraces, indicating relatively less reduction in band...
Band-gap states in nominally undoped CVD diamond films have been studied using sub-band-gap illumination with photon energy ranging from 2.4 to 3.53 eV. It was found that, with the grain size increased from 0.5 to 40 渭m, the sub-band-gap photoconductivity measured under the constant ...
In the dark, charges are thermally activated over the bandgap of the system, which in a D-A heterojunction corresponds to energy of CT states. In an ideal diode, this current corresponds to the saturation current, J046. In PM-OPDs, charge carriers forming J0 accumulate in the same way ...
Nitrogen-related dopant and defect states in CVD diamond Subbandgap absorption of chemical-vapor-deposition diamond films, with nitrogen contents varying from 10 to 132 ppm has been explored by the constant-photo... E Rohrer,CFO Graeff,R Janssen,... - 《Phys Rev B Condens Matter》 被引量:...
This can be attributed to the sub-bandgap states of LM/MO frameworks, contributing to pseudo-ohmic contacts which reduce the free carrier injection barrier to Ga2O3.ACS Applied Materials & InterfacesWei ZhangKourosh Kalantar-zadeh
The hybridization of O 2p and Sn 5s orbitals of SnO introduces mid-gap states in the bandgap of SnO_2, enabling hole transport property for SnO_(2-x) when x is > 0.2. Increasing the percentage of SnO in SnO_(2-x) ... Z Ni,Z Yu,J Huang - 《Applied Physics Letters》 被引量:...
With the effective mass mismatch and increasing QD size, the number of IB states increases, leading to higher interband photocurrent densities. The increase in the sub-bandgap photocurrent can be achieved by increasing in-plane QD density, increasing the number of QD layers, or using light-...
Optical excitation with a sub-bandgap optical power (E ph = 0.95 eV < Eg,Si = 1.12 eV) is applied over the MOSFETs and the gate-induced drain leakage (GIDL) current, named the optically-induced GIDL, and the energy distribution of interface states in the gate-to-drain overlapped region ...
The mode density is calculated as the local density of states integrated over all states above the bandgap in the propagation constant spectrum (shown in Fig. 3e). Experimental set-up and methods In our experiments, we establish the desired photonic lattices (either the 1D ‘twisted’ and ...
The negligible response below the bandgap also confirmed low sub-gap states in the ZnTe single crystal. In comparison, the PLM processed ZnTe:O diode exhibits a distinguished band of spectral response centered at 1.8 eV, which exactly has the same spectral overlapping with the enhanced ...